The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes

Abstract The development of efficient green light-emitting diodes (LEDs) is of paramount importance for the realization of colour-mixing white LEDs with a high luminous efficiency. While the insertion of an InGaN/GaN superlattice (SL) with a lower In content before the growth of InGaN/GaN multiple q...

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Autores principales:	Shengjun Zhou, Xingtong Liu, Han Yan, Yilin Gao, Haohao Xu, Jie Zhao, Zhijue Quan, Chengqun Gui, Sheng Liu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/717ee8c3b6694daebc2450f989e23ca5
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spelling	oai:doaj.org-article:717ee8c3b6694daebc2450f989e23ca52021-12-02T15:08:17ZThe effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes10.1038/s41598-018-29440-42045-2322https://doaj.org/article/717ee8c3b6694daebc2450f989e23ca52018-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-29440-4https://doaj.org/toc/2045-2322Abstract The development of efficient green light-emitting diodes (LEDs) is of paramount importance for the realization of colour-mixing white LEDs with a high luminous efficiency. While the insertion of an InGaN/GaN superlattice (SL) with a lower In content before the growth of InGaN/GaN multiple quantum wells (MQWs) is known to increase the efficiency of LEDs, the actual mechanism is still debated. We therefore conduct a systematic study and investigate the different mechanisms for this system. Through cathodoluminescence and Raman measurements, we clearly demonstrate that the potential barrier formed by the V-pit during the low-temperature growth of an InGaN/GaN SL dramatically increases the internal quantum efficiency (IQE) of InGaN quantum wells (QWs) by suppressing non-radiative recombination at threading dislocations (TDs). We find that the V-pit potential barrier height depends on the V-pit diameter, which plays an important role in determining the quantum efficiency, forward voltage and efficiency droop of green LEDs. Furthermore, our study reveals that the low-temperature GaN can act as an alternative to an InGaN/GaN SL structure for promoting the formation of V-pits. Our findings suggest the potential of implementing optimized V-pits embedded in an InGaN/GaN SL or low-temperature GaN structure as a beneficial underlying layer for the realization of highly efficient green LEDs.Shengjun ZhouXingtong LiuHan YanYilin GaoHaohao XuJie ZhaoZhijue QuanChengqun GuiSheng LiuNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-12 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Shengjun Zhou Xingtong Liu Han Yan Yilin Gao Haohao Xu Jie Zhao Zhijue Quan Chengqun Gui Sheng Liu The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes
description	Abstract The development of efficient green light-emitting diodes (LEDs) is of paramount importance for the realization of colour-mixing white LEDs with a high luminous efficiency. While the insertion of an InGaN/GaN superlattice (SL) with a lower In content before the growth of InGaN/GaN multiple quantum wells (MQWs) is known to increase the efficiency of LEDs, the actual mechanism is still debated. We therefore conduct a systematic study and investigate the different mechanisms for this system. Through cathodoluminescence and Raman measurements, we clearly demonstrate that the potential barrier formed by the V-pit during the low-temperature growth of an InGaN/GaN SL dramatically increases the internal quantum efficiency (IQE) of InGaN quantum wells (QWs) by suppressing non-radiative recombination at threading dislocations (TDs). We find that the V-pit potential barrier height depends on the V-pit diameter, which plays an important role in determining the quantum efficiency, forward voltage and efficiency droop of green LEDs. Furthermore, our study reveals that the low-temperature GaN can act as an alternative to an InGaN/GaN SL structure for promoting the formation of V-pits. Our findings suggest the potential of implementing optimized V-pits embedded in an InGaN/GaN SL or low-temperature GaN structure as a beneficial underlying layer for the realization of highly efficient green LEDs.
format	article
author	Shengjun Zhou Xingtong Liu Han Yan Yilin Gao Haohao Xu Jie Zhao Zhijue Quan Chengqun Gui Sheng Liu
author_facet	Shengjun Zhou Xingtong Liu Han Yan Yilin Gao Haohao Xu Jie Zhao Zhijue Quan Chengqun Gui Sheng Liu
author_sort	Shengjun Zhou
title	The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes
title_short	The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes
title_full	The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes
title_fullStr	The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes
title_full_unstemmed	The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes
title_sort	effect of nanometre-scale v-pits on electronic and optical properties and efficiency droop of gan-based green light-emitting diodes
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/717ee8c3b6694daebc2450f989e23ca5
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The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes

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