Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy

Abstract With the rapid depletion of communication-frequency resources, mainly due to the explosive spread of information communication devices for the internet of things, GaN-based high-frequency high-power transistors (GaN-HEMTs) have attracted considerable interest as one of the key devices that...

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Autores principales:	Keiichi Omika, Yasunori Tateno, Tsuyoshi Kouchi, Tsutomu Komatani, Seiji Yaegassi, Keiichi Yui, Ken Nakata, Naoka Nagamura, Masato Kotsugi, Koji Horiba, Masaharu Oshima, Maki Suemitsu, Hirokazu Fukidome
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/71a1bc3c36ce4b248bd1a5f7366d5a86
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spelling	oai:doaj.org-article:71a1bc3c36ce4b248bd1a5f7366d5a862021-12-02T15:09:05ZOperation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy10.1038/s41598-018-31485-42045-2322https://doaj.org/article/71a1bc3c36ce4b248bd1a5f7366d5a862018-09-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-31485-4https://doaj.org/toc/2045-2322Abstract With the rapid depletion of communication-frequency resources, mainly due to the explosive spread of information communication devices for the internet of things, GaN-based high-frequency high-power transistors (GaN-HEMTs) have attracted considerable interest as one of the key devices that can operate in the high-frequency millimeter-wave band. However, GaN-HEMT operation is destabilized by current collapse phenomena arising from surface electron trapping (SET), which has not been fully understood thus far. Here, we conduct quantitative mechanistic studies on SET in GaN-HEMTs by applying element- and site-specific photoelectron nanospectroscopy to a GaN-HEMT device under operation. Our study reveals that SET is induced by a large local electric field. Furthermore, surface passivation using a SiN thin film is demonstrated to play a dual role: electric-field weakening and giving rise to chemical interactions that suppress SET. Our findings can contribute to the realization of high-capacity wireless communication systems based on GaN-HEMTs.Keiichi OmikaYasunori TatenoTsuyoshi KouchiTsutomu KomataniSeiji YaegassiKeiichi YuiKen NakataNaoka NagamuraMasato KotsugiKoji HoribaMasaharu OshimaMaki SuemitsuHirokazu FukidomeNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Keiichi Omika Yasunori Tateno Tsuyoshi Kouchi Tsutomu Komatani Seiji Yaegassi Keiichi Yui Ken Nakata Naoka Nagamura Masato Kotsugi Koji Horiba Masaharu Oshima Maki Suemitsu Hirokazu Fukidome Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy
description	Abstract With the rapid depletion of communication-frequency resources, mainly due to the explosive spread of information communication devices for the internet of things, GaN-based high-frequency high-power transistors (GaN-HEMTs) have attracted considerable interest as one of the key devices that can operate in the high-frequency millimeter-wave band. However, GaN-HEMT operation is destabilized by current collapse phenomena arising from surface electron trapping (SET), which has not been fully understood thus far. Here, we conduct quantitative mechanistic studies on SET in GaN-HEMTs by applying element- and site-specific photoelectron nanospectroscopy to a GaN-HEMT device under operation. Our study reveals that SET is induced by a large local electric field. Furthermore, surface passivation using a SiN thin film is demonstrated to play a dual role: electric-field weakening and giving rise to chemical interactions that suppress SET. Our findings can contribute to the realization of high-capacity wireless communication systems based on GaN-HEMTs.
format	article
author	Keiichi Omika Yasunori Tateno Tsuyoshi Kouchi Tsutomu Komatani Seiji Yaegassi Keiichi Yui Ken Nakata Naoka Nagamura Masato Kotsugi Koji Horiba Masaharu Oshima Maki Suemitsu Hirokazu Fukidome
author_facet	Keiichi Omika Yasunori Tateno Tsuyoshi Kouchi Tsutomu Komatani Seiji Yaegassi Keiichi Yui Ken Nakata Naoka Nagamura Masato Kotsugi Koji Horiba Masaharu Oshima Maki Suemitsu Hirokazu Fukidome
author_sort	Keiichi Omika
title	Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy
title_short	Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy
title_full	Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy
title_fullStr	Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy
title_full_unstemmed	Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy
title_sort	operation mechanism of gan-based transistors elucidated by element-specific x-ray nanospectroscopy
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/71a1bc3c36ce4b248bd1a5f7366d5a86
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Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy

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