Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy

Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy

Abstract With the rapid depletion of communication-frequency resources, mainly due to the explosive spread of information communication devices for the internet of things, GaN-based high-frequency high-power transistors (GaN-HEMTs) have attracted considerable interest as one of the key devices that...

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Autores principales: Keiichi Omika, Yasunori Tateno, Tsuyoshi Kouchi, Tsutomu Komatani, Seiji Yaegassi, Keiichi Yui, Ken Nakata, Naoka Nagamura, Masato Kotsugi, Koji Horiba, Masaharu Oshima, Maki Suemitsu, Hirokazu Fukidome
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
Materias:
Medicine
R
Science
Q
Acceso en línea:https://doaj.org/article/71a1bc3c36ce4b248bd1a5f7366d5a86
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