Over 15 MA/cm2 of critical current density in 4.8 µm thick, Zr-doped (Gd,Y)Ba2Cu3Ox superconductor at 30 K, 3T

Abstract An Advanced MOCVD (A-MOCVD) reactor was used to deposit 4.8 µm thick (Gd,Y)BaCuO tapes with 15 mol% Zr addition in a single pass. A record-high critical current density (J c ) of 15.11 MA/cm2 has been measured over a bridge at 30 K, 3T, corresponding to an equivalent (I c ) value of 8705 A/...

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Autores principales: Goran Majkic, Rudra Pratap, Aixia Xu, Eduard Galstyan, Venkat Selvamanickam
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Publicado: Nature Portfolio 2018
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spelling oai:doaj.org-article:728a132ce54545b2885b851716747df22021-12-02T12:32:47ZOver 15 MA/cm2 of critical current density in 4.8 µm thick, Zr-doped (Gd,Y)Ba2Cu3Ox superconductor at 30 K, 3T10.1038/s41598-018-25499-12045-2322https://doaj.org/article/728a132ce54545b2885b851716747df22018-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-25499-1https://doaj.org/toc/2045-2322Abstract An Advanced MOCVD (A-MOCVD) reactor was used to deposit 4.8 µm thick (Gd,Y)BaCuO tapes with 15 mol% Zr addition in a single pass. A record-high critical current density (J c ) of 15.11 MA/cm2 has been measured over a bridge at 30 K, 3T, corresponding to an equivalent (I c ) value of 8705 A/12 mm width. This corresponds to a lift factor in critical current of ~11 which is the highest ever reported to the best of author’s knowledge. The measured critical current densities at 3T (B||c) and 30, 40 and 50 K, respectively, are 15.11, 9.70 and 6.26 MA/cm2, corresponding to equivalent Ic values of 8705, 5586 and 3606 A/12 mm and engineering current densities (J e ) of 7068, 4535 and 2928 A/mm2. The engineering current density (J e ) at 40 K, 3T is 7 times higher than that of the commercial HTS tapes available with 7.5 mol% Zr addition. Such record-high performance in thick films (>1 µm) is a clear demonstration that growing thick REBCO films with high critical current density (J c ) is possible, contrary to the usual findings of strong J c degradation with film thickness. This achievement was possible due to a combination of strong temperature control and uniform laminar flow achieved in the A-MOCVD system, coupled with optimization of BaZrO3 nanorod growth parameters.Goran MajkicRudra PratapAixia XuEduard GalstyanVenkat SelvamanickamNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-6 (2018)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Goran Majkic
Rudra Pratap
Aixia Xu
Eduard Galstyan
Venkat Selvamanickam
Over 15 MA/cm2 of critical current density in 4.8 µm thick, Zr-doped (Gd,Y)Ba2Cu3Ox superconductor at 30 K, 3T
description Abstract An Advanced MOCVD (A-MOCVD) reactor was used to deposit 4.8 µm thick (Gd,Y)BaCuO tapes with 15 mol% Zr addition in a single pass. A record-high critical current density (J c ) of 15.11 MA/cm2 has been measured over a bridge at 30 K, 3T, corresponding to an equivalent (I c ) value of 8705 A/12 mm width. This corresponds to a lift factor in critical current of ~11 which is the highest ever reported to the best of author’s knowledge. The measured critical current densities at 3T (B||c) and 30, 40 and 50 K, respectively, are 15.11, 9.70 and 6.26 MA/cm2, corresponding to equivalent Ic values of 8705, 5586 and 3606 A/12 mm and engineering current densities (J e ) of 7068, 4535 and 2928 A/mm2. The engineering current density (J e ) at 40 K, 3T is 7 times higher than that of the commercial HTS tapes available with 7.5 mol% Zr addition. Such record-high performance in thick films (>1 µm) is a clear demonstration that growing thick REBCO films with high critical current density (J c ) is possible, contrary to the usual findings of strong J c degradation with film thickness. This achievement was possible due to a combination of strong temperature control and uniform laminar flow achieved in the A-MOCVD system, coupled with optimization of BaZrO3 nanorod growth parameters.
format article
author Goran Majkic
Rudra Pratap
Aixia Xu
Eduard Galstyan
Venkat Selvamanickam
author_facet Goran Majkic
Rudra Pratap
Aixia Xu
Eduard Galstyan
Venkat Selvamanickam
author_sort Goran Majkic
title Over 15 MA/cm2 of critical current density in 4.8 µm thick, Zr-doped (Gd,Y)Ba2Cu3Ox superconductor at 30 K, 3T
title_short Over 15 MA/cm2 of critical current density in 4.8 µm thick, Zr-doped (Gd,Y)Ba2Cu3Ox superconductor at 30 K, 3T
title_full Over 15 MA/cm2 of critical current density in 4.8 µm thick, Zr-doped (Gd,Y)Ba2Cu3Ox superconductor at 30 K, 3T
title_fullStr Over 15 MA/cm2 of critical current density in 4.8 µm thick, Zr-doped (Gd,Y)Ba2Cu3Ox superconductor at 30 K, 3T
title_full_unstemmed Over 15 MA/cm2 of critical current density in 4.8 µm thick, Zr-doped (Gd,Y)Ba2Cu3Ox superconductor at 30 K, 3T
title_sort over 15 ma/cm2 of critical current density in 4.8 µm thick, zr-doped (gd,y)ba2cu3ox superconductor at 30 k, 3t
publisher Nature Portfolio
publishDate 2018
url https://doaj.org/article/728a132ce54545b2885b851716747df2
work_keys_str_mv AT goranmajkic over15macm2ofcriticalcurrentdensityin48μmthickzrdopedgdyba2cu3oxsuperconductorat30k3t
AT rudrapratap over15macm2ofcriticalcurrentdensityin48μmthickzrdopedgdyba2cu3oxsuperconductorat30k3t
AT aixiaxu over15macm2ofcriticalcurrentdensityin48μmthickzrdopedgdyba2cu3oxsuperconductorat30k3t
AT eduardgalstyan over15macm2ofcriticalcurrentdensityin48μmthickzrdopedgdyba2cu3oxsuperconductorat30k3t
AT venkatselvamanickam over15macm2ofcriticalcurrentdensityin48μmthickzrdopedgdyba2cu3oxsuperconductorat30k3t
_version_ 1718393986039676928