Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer as the Gate Insulator

In this study, we proposed using the high-K polyvinyl alcohol (PVA)/low-K poly-4-vinylphenol (PVP) bilayer structure as the gate insulator to improve the performance of a pentacene-based organic thin-film transistor. The dielectric constant of the optimal high-K PVA/low-K PVP bilayer was 5.6, which...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Ching-Lin Fan, Hou-Yen Tsao, Yu-Shien Shiah, Che-Wei Yao, Po-Wei Cheng
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	organic TFT pentacene gate dielectric high-K field-effect mobility surface morphology Organic chemistry QD241-441
Acceso en línea:	https://doaj.org/article/72d04d226c5644a19ce9e10102b5d420
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:72d04d226c5644a19ce9e10102b5d420
record_format	dspace
spelling	oai:doaj.org-article:72d04d226c5644a19ce9e10102b5d4202021-11-25T18:48:36ZPerformance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer as the Gate Insulator10.3390/polym132239412073-4360https://doaj.org/article/72d04d226c5644a19ce9e10102b5d4202021-11-01T00:00:00Zhttps://www.mdpi.com/2073-4360/13/22/3941https://doaj.org/toc/2073-4360In this study, we proposed using the high-K polyvinyl alcohol (PVA)/low-K poly-4-vinylphenol (PVP) bilayer structure as the gate insulator to improve the performance of a pentacene-based organic thin-film transistor. The dielectric constant of the optimal high-K PVA/low-K PVP bilayer was 5.6, which was higher than that of the single PVP layer. It resulted in an increase in the gate capacitance and an increased drain current. The surface morphology of the bilayer gate dielectric could be suitable for pentacene grain growth because the PVP layer was deposited above the organic PVA surface, thereby replacing the inorganic surface of the ITO gate electrode. The device performances were significantly improved by using the bilayer gate dielectric based upon the high-K characteristics of the PVA layer and the enlargement of the pentacene grain. Notably, the field-effect mobility was increased from 0.16 to 1.12 cm<sup>2</sup>/(Vs), 7 times higher than that of the control sample.Ching-Lin FanHou-Yen TsaoYu-Shien ShiahChe-Wei YaoPo-Wei ChengMDPI AGarticleorganic TFTpentacenegate dielectrichigh-Kfield-effect mobilitysurface morphologyOrganic chemistryQD241-441ENPolymers, Vol 13, Iss 3941, p 3941 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	organic TFT pentacene gate dielectric high-K field-effect mobility surface morphology Organic chemistry QD241-441
spellingShingle	organic TFT pentacene gate dielectric high-K field-effect mobility surface morphology Organic chemistry QD241-441 Ching-Lin Fan Hou-Yen Tsao Yu-Shien Shiah Che-Wei Yao Po-Wei Cheng Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer as the Gate Insulator
description	In this study, we proposed using the high-K polyvinyl alcohol (PVA)/low-K poly-4-vinylphenol (PVP) bilayer structure as the gate insulator to improve the performance of a pentacene-based organic thin-film transistor. The dielectric constant of the optimal high-K PVA/low-K PVP bilayer was 5.6, which was higher than that of the single PVP layer. It resulted in an increase in the gate capacitance and an increased drain current. The surface morphology of the bilayer gate dielectric could be suitable for pentacene grain growth because the PVP layer was deposited above the organic PVA surface, thereby replacing the inorganic surface of the ITO gate electrode. The device performances were significantly improved by using the bilayer gate dielectric based upon the high-K characteristics of the PVA layer and the enlargement of the pentacene grain. Notably, the field-effect mobility was increased from 0.16 to 1.12 cm<sup>2</sup>/(Vs), 7 times higher than that of the control sample.
format	article
author	Ching-Lin Fan Hou-Yen Tsao Yu-Shien Shiah Che-Wei Yao Po-Wei Cheng
author_facet	Ching-Lin Fan Hou-Yen Tsao Yu-Shien Shiah Che-Wei Yao Po-Wei Cheng
author_sort	Ching-Lin Fan
title	Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer as the Gate Insulator
title_short	Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer as the Gate Insulator
title_full	Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer as the Gate Insulator
title_fullStr	Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer as the Gate Insulator
title_full_unstemmed	Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer as the Gate Insulator
title_sort	performance enhancement of pentacene-based organic thin-film transistors using a high-k pva/low-k pvp bilayer as the gate insulator
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/72d04d226c5644a19ce9e10102b5d420
work_keys_str_mv	AT chinglinfan performanceenhancementofpentacenebasedorganicthinfilmtransistorsusingahighkpvalowkpvpbilayerasthegateinsulator AT houyentsao performanceenhancementofpentacenebasedorganicthinfilmtransistorsusingahighkpvalowkpvpbilayerasthegateinsulator AT yushienshiah performanceenhancementofpentacenebasedorganicthinfilmtransistorsusingahighkpvalowkpvpbilayerasthegateinsulator AT cheweiyao performanceenhancementofpentacenebasedorganicthinfilmtransistorsusingahighkpvalowkpvpbilayerasthegateinsulator AT poweicheng performanceenhancementofpentacenebasedorganicthinfilmtransistorsusingahighkpvalowkpvpbilayerasthegateinsulator
_version_	1718410651946188800

Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer as the Gate Insulator

Ejemplares similares