Solution-based polycrystalline silicon transistors produced on a paper substrate

Abstract Printing of electronics is pursued as a low-cost alternative to conventional manufacturing processes. In addition, owing to relatively low process temperatures, flexible substrates can be used enabling novel applications. Among flexible substrates, paper was found to be a particularly inter...

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Autores principales:	Miki Trifunovic, Paolo Maria Sberna, Tatsuya Shimoda, Ryoichi Ishihara
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Electronics TK7800-8360 Materials of engineering and construction. Mechanics of materials TA401-492
Acceso en línea:	https://doaj.org/article/7368410ddf9e44f0a09228631a81550a
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spelling	oai:doaj.org-article:7368410ddf9e44f0a09228631a81550a2021-12-02T14:24:11ZSolution-based polycrystalline silicon transistors produced on a paper substrate10.1038/s41528-017-0013-x2397-4621https://doaj.org/article/7368410ddf9e44f0a09228631a81550a2017-12-01T00:00:00Zhttps://doi.org/10.1038/s41528-017-0013-xhttps://doaj.org/toc/2397-4621Abstract Printing of electronics is pursued as a low-cost alternative to conventional manufacturing processes. In addition, owing to relatively low process temperatures, flexible substrates can be used enabling novel applications. Among flexible substrates, paper was found to be a particularly interesting candidate, since it has an order of magnitude lower price than low-cost polymer alternatives, and is biodegradable. As ink materials, organic and metal-oxide semiconductors are thoroughly being investigated; however, they lack in electric performance compared to silicon in terms of device mobility, reliability, and energy efficiency. In recent years, liquid precursors for silicon were found and used to create polycrystalline silicon (poly-Si). However, fabrication of transistors on top of low-cost flexible substrates such as paper has remained an outstanding challenge. Here we demonstrate both p-channel and n-channel poly-Si thin-film transistors (TFTs) fabricated directly on top of paper with field-effect mobilities of 6.2 and 2.0 cm2/V s, respectively. Many fabrication challenges have been overcome by limiting the maximum process temperature to approximately 100 °C, and avoiding liquid chemicals commonly used for etching and cleaning. Patterning of poly-Si has been achieved by additive selective crystallization of the precursor film using an excimer laser. This work serves as a proof of concept, and has the potential to further improve device performance. Owing to the low-cost, biodegradable nature of paper, and the high performance, reliability, and energy efficiency of poly-Si TFTs, this work opens a pathway toward truly low-cost, low-power, recyclable applications including smart packages, biodegradable health monitoring units, flexible displays, and disposable sensor nodes.Miki TrifunovicPaolo Maria SbernaTatsuya ShimodaRyoichi IshiharaNature PortfolioarticleElectronicsTK7800-8360Materials of engineering and construction. Mechanics of materialsTA401-492ENnpj Flexible Electronics, Vol 1, Iss 1, Pp 1-6 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Electronics TK7800-8360 Materials of engineering and construction. Mechanics of materials TA401-492
spellingShingle	Electronics TK7800-8360 Materials of engineering and construction. Mechanics of materials TA401-492 Miki Trifunovic Paolo Maria Sberna Tatsuya Shimoda Ryoichi Ishihara Solution-based polycrystalline silicon transistors produced on a paper substrate
description	Abstract Printing of electronics is pursued as a low-cost alternative to conventional manufacturing processes. In addition, owing to relatively low process temperatures, flexible substrates can be used enabling novel applications. Among flexible substrates, paper was found to be a particularly interesting candidate, since it has an order of magnitude lower price than low-cost polymer alternatives, and is biodegradable. As ink materials, organic and metal-oxide semiconductors are thoroughly being investigated; however, they lack in electric performance compared to silicon in terms of device mobility, reliability, and energy efficiency. In recent years, liquid precursors for silicon were found and used to create polycrystalline silicon (poly-Si). However, fabrication of transistors on top of low-cost flexible substrates such as paper has remained an outstanding challenge. Here we demonstrate both p-channel and n-channel poly-Si thin-film transistors (TFTs) fabricated directly on top of paper with field-effect mobilities of 6.2 and 2.0 cm2/V s, respectively. Many fabrication challenges have been overcome by limiting the maximum process temperature to approximately 100 °C, and avoiding liquid chemicals commonly used for etching and cleaning. Patterning of poly-Si has been achieved by additive selective crystallization of the precursor film using an excimer laser. This work serves as a proof of concept, and has the potential to further improve device performance. Owing to the low-cost, biodegradable nature of paper, and the high performance, reliability, and energy efficiency of poly-Si TFTs, this work opens a pathway toward truly low-cost, low-power, recyclable applications including smart packages, biodegradable health monitoring units, flexible displays, and disposable sensor nodes.
format	article
author	Miki Trifunovic Paolo Maria Sberna Tatsuya Shimoda Ryoichi Ishihara
author_facet	Miki Trifunovic Paolo Maria Sberna Tatsuya Shimoda Ryoichi Ishihara
author_sort	Miki Trifunovic
title	Solution-based polycrystalline silicon transistors produced on a paper substrate
title_short	Solution-based polycrystalline silicon transistors produced on a paper substrate
title_full	Solution-based polycrystalline silicon transistors produced on a paper substrate
title_fullStr	Solution-based polycrystalline silicon transistors produced on a paper substrate
title_full_unstemmed	Solution-based polycrystalline silicon transistors produced on a paper substrate
title_sort	solution-based polycrystalline silicon transistors produced on a paper substrate
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/7368410ddf9e44f0a09228631a81550a
work_keys_str_mv	AT mikitrifunovic solutionbasedpolycrystallinesilicontransistorsproducedonapapersubstrate AT paolomariasberna solutionbasedpolycrystallinesilicontransistorsproducedonapapersubstrate AT tatsuyashimoda solutionbasedpolycrystallinesilicontransistorsproducedonapapersubstrate AT ryoichiishihara solutionbasedpolycrystallinesilicontransistorsproducedonapapersubstrate
_version_	1718391432782282752

Solution-based polycrystalline silicon transistors produced on a paper substrate

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