A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Abstract Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursued approaches to achieve such a sub...

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Autores principales:	Wolfgang A. Vitale, Emanuele A. Casu, Arnab Biswas, Teodor Rosca, Cem Alper, Anna Krammer, Gia V. Luong, Qing-T. Zhao, Siegfried Mantl, Andreas Schüler, A. M. Ionescu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/73ca29e6befb407bb05995e0d2252883
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spelling	oai:doaj.org-article:73ca29e6befb407bb05995e0d22528832021-12-02T11:52:40ZA Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor10.1038/s41598-017-00359-62045-2322https://doaj.org/article/73ca29e6befb407bb05995e0d22528832017-03-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-00359-6https://doaj.org/toc/2045-2322Abstract Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursued approaches to achieve such a subthermionic subthreshold swing consist in alternative carrier injection mechanisms, like quantum mechanical band-to-band tunneling (BTBT) in Tunnel FETs or abrupt phase-change in metal-insulator transition (MIT) devices. The strengths of the BTBT and MIT have been combined in a hybrid device architecture called phase-change tunnel FET (PC-TFET), in which the abrupt MIT in vanadium dioxide (VO2) lowers the subthreshold swing of strained-silicon nanowire TFETs. In this work, we demonstrate that the principle underlying the low swing in the PC-TFET relates to a sub-unity body factor achieved by an internal differential gate voltage amplification. We study the effect of temperature on the switching ratio and the swing of the PC-TFET, reporting values as low as 4.0 mV/decade at 25 °C, 7.8 mV/decade at 45 °C. We discuss how the unique characteristics of the PC-TFET open new perspectives, beyond FETs and other steep-slope transistors, for low power electronics, analog circuits and neuromorphic computing.Wolfgang A. VitaleEmanuele A. CasuArnab BiswasTeodor RoscaCem AlperAnna KrammerGia V. LuongQing-T. ZhaoSiegfried MantlAndreas SchülerA. M. IonescuNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Wolfgang A. Vitale Emanuele A. Casu Arnab Biswas Teodor Rosca Cem Alper Anna Krammer Gia V. Luong Qing-T. Zhao Siegfried Mantl Andreas Schüler A. M. Ionescu A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor
description	Abstract Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursued approaches to achieve such a subthermionic subthreshold swing consist in alternative carrier injection mechanisms, like quantum mechanical band-to-band tunneling (BTBT) in Tunnel FETs or abrupt phase-change in metal-insulator transition (MIT) devices. The strengths of the BTBT and MIT have been combined in a hybrid device architecture called phase-change tunnel FET (PC-TFET), in which the abrupt MIT in vanadium dioxide (VO2) lowers the subthreshold swing of strained-silicon nanowire TFETs. In this work, we demonstrate that the principle underlying the low swing in the PC-TFET relates to a sub-unity body factor achieved by an internal differential gate voltage amplification. We study the effect of temperature on the switching ratio and the swing of the PC-TFET, reporting values as low as 4.0 mV/decade at 25 °C, 7.8 mV/decade at 45 °C. We discuss how the unique characteristics of the PC-TFET open new perspectives, beyond FETs and other steep-slope transistors, for low power electronics, analog circuits and neuromorphic computing.
format	article
author	Wolfgang A. Vitale Emanuele A. Casu Arnab Biswas Teodor Rosca Cem Alper Anna Krammer Gia V. Luong Qing-T. Zhao Siegfried Mantl Andreas Schüler A. M. Ionescu
author_facet	Wolfgang A. Vitale Emanuele A. Casu Arnab Biswas Teodor Rosca Cem Alper Anna Krammer Gia V. Luong Qing-T. Zhao Siegfried Mantl Andreas Schüler A. M. Ionescu
author_sort	Wolfgang A. Vitale
title	A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor
title_short	A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor
title_full	A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor
title_fullStr	A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor
title_full_unstemmed	A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor
title_sort	steep-slope transistor combining phase-change and band-to-band-tunneling to achieve a sub-unity body factor
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/73ca29e6befb407bb05995e0d2252883
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A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

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