Simulation of nanoscale domain growth for ferroelectric recording
The growth process of nm-scale polarization domains is of great interest from a physical point of view and is also important in the design of ferroelectric recording, which is expected to be a high-density information recording method. To clarify the growth of nanoscale domains in probe-based ferroe...
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2021
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oai:doaj.org-article:743c62991b854c6da5ea2e3e316d7a832021-12-01T18:52:06ZSimulation of nanoscale domain growth for ferroelectric recording2158-322610.1063/5.0074004https://doaj.org/article/743c62991b854c6da5ea2e3e316d7a832021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0074004https://doaj.org/toc/2158-3226The growth process of nm-scale polarization domains is of great interest from a physical point of view and is also important in the design of ferroelectric recording, which is expected to be a high-density information recording method. To clarify the growth of nanoscale domains in probe-based ferroelectric recording, a simulation method based on the time-dependent Ginzburg–Landau equation has been developed. In this method, wall pinning is included in the phenomenological free energy by using a coercive field. The simulation results agreed with the experimental results for nanoscale domain writing using a probe. The developed method was used to determine the relationship between the smallest writable domain size and the material properties: smaller wall energy density and larger saturation polarization and coercive field enable writing smaller domains. The developed method is thus effective in designing ferroelectric recording systems for high-density information storage.Kenji FukuzawaYoshiomi HiranagaYasuo ChoAIP Publishing LLCarticlePhysicsQC1-999ENAIP Advances, Vol 11, Iss 11, Pp 115117-115117-8 (2021) |
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Physics QC1-999 |
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Physics QC1-999 Kenji Fukuzawa Yoshiomi Hiranaga Yasuo Cho Simulation of nanoscale domain growth for ferroelectric recording |
description |
The growth process of nm-scale polarization domains is of great interest from a physical point of view and is also important in the design of ferroelectric recording, which is expected to be a high-density information recording method. To clarify the growth of nanoscale domains in probe-based ferroelectric recording, a simulation method based on the time-dependent Ginzburg–Landau equation has been developed. In this method, wall pinning is included in the phenomenological free energy by using a coercive field. The simulation results agreed with the experimental results for nanoscale domain writing using a probe. The developed method was used to determine the relationship between the smallest writable domain size and the material properties: smaller wall energy density and larger saturation polarization and coercive field enable writing smaller domains. The developed method is thus effective in designing ferroelectric recording systems for high-density information storage. |
format |
article |
author |
Kenji Fukuzawa Yoshiomi Hiranaga Yasuo Cho |
author_facet |
Kenji Fukuzawa Yoshiomi Hiranaga Yasuo Cho |
author_sort |
Kenji Fukuzawa |
title |
Simulation of nanoscale domain growth for ferroelectric recording |
title_short |
Simulation of nanoscale domain growth for ferroelectric recording |
title_full |
Simulation of nanoscale domain growth for ferroelectric recording |
title_fullStr |
Simulation of nanoscale domain growth for ferroelectric recording |
title_full_unstemmed |
Simulation of nanoscale domain growth for ferroelectric recording |
title_sort |
simulation of nanoscale domain growth for ferroelectric recording |
publisher |
AIP Publishing LLC |
publishDate |
2021 |
url |
https://doaj.org/article/743c62991b854c6da5ea2e3e316d7a83 |
work_keys_str_mv |
AT kenjifukuzawa simulationofnanoscaledomaingrowthforferroelectricrecording AT yoshiomihiranaga simulationofnanoscaledomaingrowthforferroelectricrecording AT yasuocho simulationofnanoscaledomaingrowthforferroelectricrecording |
_version_ |
1718404698874052608 |