Grain-boundary segregation of magnesium in doped cuprous oxide and impact on electrical transport properties

Abstract In this study, we report the segregation of magnesium in the grain boundaries of magnesium-doped cuprous oxide (Cu2O:Mg) thin films as revealed by atom probe tomography and the consequences of the dopant presence on the temperature-dependent Hall effect properties. The incorporation of magn...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	João Resende, Van-Son Nguyen, Claudia Fleischmann, Lorenzo Bottiglieri, Stéphane Brochen, Wilfried Vandervorst, Wilfried Favre, Carmen Jiménez, Jean-Luc Deschanvres, Ngoc Duy Nguyen
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/75b3fe7009834c39a01d7bb61e062344
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:75b3fe7009834c39a01d7bb61e062344
record_format	dspace
spelling	oai:doaj.org-article:75b3fe7009834c39a01d7bb61e0623442021-12-02T14:21:21ZGrain-boundary segregation of magnesium in doped cuprous oxide and impact on electrical transport properties10.1038/s41598-021-86969-72045-2322https://doaj.org/article/75b3fe7009834c39a01d7bb61e0623442021-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-86969-7https://doaj.org/toc/2045-2322Abstract In this study, we report the segregation of magnesium in the grain boundaries of magnesium-doped cuprous oxide (Cu2O:Mg) thin films as revealed by atom probe tomography and the consequences of the dopant presence on the temperature-dependent Hall effect properties. The incorporation of magnesium as a divalent cation was achieved by aerosol-assisted metal organic chemical vapour deposition, followed by thermal treatments under oxidizing conditions. We observe that, in comparison with intrinsic cuprous oxide, the electronic transport is improved in Cu2O:Mg with a reduction of resistivity to 13.3 ± 0.1 Ω cm, despite the reduction of hole mobility in the doped films, due to higher grain-boundary scattering. The Hall carrier concentration dependence with temperature showed the presence of an acceptor level associated with an ionization energy of 125 ± 9 meV, similar to the energy value of a large size impurity−vacancy complex. Atom probe tomography shows a magnesium incorporation of 5%, which is substantially present at the grain boundaries of the Cu2O.João ResendeVan-Son NguyenClaudia FleischmannLorenzo BottiglieriStéphane BrochenWilfried VandervorstWilfried FavreCarmen JiménezJean-Luc DeschanvresNgoc Duy NguyenNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q João Resende Van-Son Nguyen Claudia Fleischmann Lorenzo Bottiglieri Stéphane Brochen Wilfried Vandervorst Wilfried Favre Carmen Jiménez Jean-Luc Deschanvres Ngoc Duy Nguyen Grain-boundary segregation of magnesium in doped cuprous oxide and impact on electrical transport properties
description	Abstract In this study, we report the segregation of magnesium in the grain boundaries of magnesium-doped cuprous oxide (Cu2O:Mg) thin films as revealed by atom probe tomography and the consequences of the dopant presence on the temperature-dependent Hall effect properties. The incorporation of magnesium as a divalent cation was achieved by aerosol-assisted metal organic chemical vapour deposition, followed by thermal treatments under oxidizing conditions. We observe that, in comparison with intrinsic cuprous oxide, the electronic transport is improved in Cu2O:Mg with a reduction of resistivity to 13.3 ± 0.1 Ω cm, despite the reduction of hole mobility in the doped films, due to higher grain-boundary scattering. The Hall carrier concentration dependence with temperature showed the presence of an acceptor level associated with an ionization energy of 125 ± 9 meV, similar to the energy value of a large size impurity−vacancy complex. Atom probe tomography shows a magnesium incorporation of 5%, which is substantially present at the grain boundaries of the Cu2O.
format	article
author	João Resende Van-Son Nguyen Claudia Fleischmann Lorenzo Bottiglieri Stéphane Brochen Wilfried Vandervorst Wilfried Favre Carmen Jiménez Jean-Luc Deschanvres Ngoc Duy Nguyen
author_facet	João Resende Van-Son Nguyen Claudia Fleischmann Lorenzo Bottiglieri Stéphane Brochen Wilfried Vandervorst Wilfried Favre Carmen Jiménez Jean-Luc Deschanvres Ngoc Duy Nguyen
author_sort	João Resende
title	Grain-boundary segregation of magnesium in doped cuprous oxide and impact on electrical transport properties
title_short	Grain-boundary segregation of magnesium in doped cuprous oxide and impact on electrical transport properties
title_full	Grain-boundary segregation of magnesium in doped cuprous oxide and impact on electrical transport properties
title_fullStr	Grain-boundary segregation of magnesium in doped cuprous oxide and impact on electrical transport properties
title_full_unstemmed	Grain-boundary segregation of magnesium in doped cuprous oxide and impact on electrical transport properties
title_sort	grain-boundary segregation of magnesium in doped cuprous oxide and impact on electrical transport properties
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/75b3fe7009834c39a01d7bb61e062344
work_keys_str_mv	AT joaoresende grainboundarysegregationofmagnesiumindopedcuprousoxideandimpactonelectricaltransportproperties AT vansonnguyen grainboundarysegregationofmagnesiumindopedcuprousoxideandimpactonelectricaltransportproperties AT claudiafleischmann grainboundarysegregationofmagnesiumindopedcuprousoxideandimpactonelectricaltransportproperties AT lorenzobottiglieri grainboundarysegregationofmagnesiumindopedcuprousoxideandimpactonelectricaltransportproperties AT stephanebrochen grainboundarysegregationofmagnesiumindopedcuprousoxideandimpactonelectricaltransportproperties AT wilfriedvandervorst grainboundarysegregationofmagnesiumindopedcuprousoxideandimpactonelectricaltransportproperties AT wilfriedfavre grainboundarysegregationofmagnesiumindopedcuprousoxideandimpactonelectricaltransportproperties AT carmenjimenez grainboundarysegregationofmagnesiumindopedcuprousoxideandimpactonelectricaltransportproperties AT jeanlucdeschanvres grainboundarysegregationofmagnesiumindopedcuprousoxideandimpactonelectricaltransportproperties AT ngocduynguyen grainboundarysegregationofmagnesiumindopedcuprousoxideandimpactonelectricaltransportproperties
_version_	1718391556655808512

Grain-boundary segregation of magnesium in doped cuprous oxide and impact on electrical transport properties

Ejemplares similares