Enhancement in external quantum efficiency of AlGaInP red μ-LED using chemical solution treatment process

Abstract To investigate the effects of their surface recovery and optical properties, extremely small sized (12 µm × 12 µm mesa area) red AlGaInP micro light emitting diodes ( $$\upmu$$ μ LED) were fabricated using a diluted hydrofluoric acid (HF) surface etch treatment. After the chemical treatment...

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Autores principales:	Byung Oh Jung, Wonyong Lee, Jeomoh Kim, Myungshin Choi, Hui-Youn Shin, Minho Joo, Sukkoo Jung, Yoon-Ho Choi, Moon J. Kim
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/75d5d924aaae457a83929855210b1ed7
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spelling	oai:doaj.org-article:75d5d924aaae457a83929855210b1ed72021-12-02T13:34:51ZEnhancement in external quantum efficiency of AlGaInP red μ-LED using chemical solution treatment process10.1038/s41598-021-83933-32045-2322https://doaj.org/article/75d5d924aaae457a83929855210b1ed72021-02-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-83933-3https://doaj.org/toc/2045-2322Abstract To investigate the effects of their surface recovery and optical properties, extremely small sized (12 µm × 12 µm mesa area) red AlGaInP micro light emitting diodes ( $$\upmu$$ μ LED) were fabricated using a diluted hydrofluoric acid (HF) surface etch treatment. After the chemical treatment, the external quantum efficiencies (EQEs) of $$\upmu$$ μ -LED at low and high injection current regions have been improved by 35.48% and 12.86%, respectively. The different phenomena of EQEs have a complex relationship between the suppression of non-radiative recombination originating from the etching damage of the surface and the improvement of light extraction of the sidewalls. The constant enhancement of EQE at a high injection current it is attributed to the expansion of the active region’s sidewall surface area by the selective etching of AlInP layers. The improved EQE at a low injection current is related to the minimization of the surface recombination caused by plasma damage from the surface. High-resolution transmission electron microscopy (HR-TEM) revealed physical defects on the sidewall surface, such as plasma-induced lattice disorder and impurity contamination damage, were eliminated using chemical treatment. This study suggests that chemical surface treatment using diluted HF acid can be an effective method for enhancing the $$\upmu$$ μ -LED performance.Byung Oh JungWonyong LeeJeomoh KimMyungshin ChoiHui-Youn ShinMinho JooSukkoo JungYoon-Ho ChoiMoon J. KimNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Byung Oh Jung Wonyong Lee Jeomoh Kim Myungshin Choi Hui-Youn Shin Minho Joo Sukkoo Jung Yoon-Ho Choi Moon J. Kim Enhancement in external quantum efficiency of AlGaInP red μ-LED using chemical solution treatment process
description	Abstract To investigate the effects of their surface recovery and optical properties, extremely small sized (12 µm × 12 µm mesa area) red AlGaInP micro light emitting diodes ( $$\upmu$$ μ LED) were fabricated using a diluted hydrofluoric acid (HF) surface etch treatment. After the chemical treatment, the external quantum efficiencies (EQEs) of $$\upmu$$ μ -LED at low and high injection current regions have been improved by 35.48% and 12.86%, respectively. The different phenomena of EQEs have a complex relationship between the suppression of non-radiative recombination originating from the etching damage of the surface and the improvement of light extraction of the sidewalls. The constant enhancement of EQE at a high injection current it is attributed to the expansion of the active region’s sidewall surface area by the selective etching of AlInP layers. The improved EQE at a low injection current is related to the minimization of the surface recombination caused by plasma damage from the surface. High-resolution transmission electron microscopy (HR-TEM) revealed physical defects on the sidewall surface, such as plasma-induced lattice disorder and impurity contamination damage, were eliminated using chemical treatment. This study suggests that chemical surface treatment using diluted HF acid can be an effective method for enhancing the $$\upmu$$ μ -LED performance.
format	article
author	Byung Oh Jung Wonyong Lee Jeomoh Kim Myungshin Choi Hui-Youn Shin Minho Joo Sukkoo Jung Yoon-Ho Choi Moon J. Kim
author_facet	Byung Oh Jung Wonyong Lee Jeomoh Kim Myungshin Choi Hui-Youn Shin Minho Joo Sukkoo Jung Yoon-Ho Choi Moon J. Kim
author_sort	Byung Oh Jung
title	Enhancement in external quantum efficiency of AlGaInP red μ-LED using chemical solution treatment process
title_short	Enhancement in external quantum efficiency of AlGaInP red μ-LED using chemical solution treatment process
title_full	Enhancement in external quantum efficiency of AlGaInP red μ-LED using chemical solution treatment process
title_fullStr	Enhancement in external quantum efficiency of AlGaInP red μ-LED using chemical solution treatment process
title_full_unstemmed	Enhancement in external quantum efficiency of AlGaInP red μ-LED using chemical solution treatment process
title_sort	enhancement in external quantum efficiency of algainp red μ-led using chemical solution treatment process
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/75d5d924aaae457a83929855210b1ed7
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Enhancement in external quantum efficiency of AlGaInP red μ-LED using chemical solution treatment process

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