Indium impurity effect on growth and structural perfect of lead-tin telluride wire crystals
In this work, we present the results of studying the indium impurity effect on the structural perfection of wire crystals (WCs) of the Pb0.8Sn0.2Te solid solution, which were obtained by sublimation in quartz capillaries. The microscopic and X-ray investigations revealed that indium doped lead-t...
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Autores principales: | , , |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2010
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Materias: | |
Acceso en línea: | https://doaj.org/article/75d986989f0e4f6caa9c7238be5b44a9 |
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Sumario: | In this work, we present the results of studying the indium impurity effect on the
structural perfection of wire crystals (WCs) of the Pb0.8Sn0.2Te solid solution, which were
obtained by sublimation in quartz capillaries.
The microscopic and X-ray investigations revealed that indium doped lead-tin telluride
single crystals with uniform distribution of indium impurity can be grown by the zone
sublimation method.
The relationship between the method of treatment of the surface of indium doped lead-
tin telluride WCs of the Pb0.8Sn0.2Te solid solution and the density of structural efects,
microhardness, and electric parameters was found.
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