Indium impurity effect on growth and structural perfect of lead-tin telluride wire crystals

In this work, we present the results of studying the indium impurity effect on the structural perfection of wire crystals (WCs) of the Pb0.8Sn0.2Te solid solution, which were obtained by sublimation in quartz capillaries. The microscopic and X-ray investigations revealed that indium doped lead-t...

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Main Authors:	Meglei, Dragoş, Dîntu, Maria, Donu, Sofia
Format:	article
Language:	EN
Published:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2010
Subjects:	Physics QC1-999 Electronics TK7800-8360
Online Access:	https://doaj.org/article/75d986989f0e4f6caa9c7238be5b44a9
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spelling	oai:doaj.org-article:75d986989f0e4f6caa9c7238be5b44a92021-11-21T12:03:49ZIndium impurity effect on growth and structural perfect of lead-tin telluride wire crystals2537-63651810-648Xhttps://doaj.org/article/75d986989f0e4f6caa9c7238be5b44a92010-06-01T00:00:00Zhttps://mjps.nanotech.md/archive/2010/article/4221https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365In this work, we present the results of studying the indium impurity effect on the structural perfection of wire crystals (WCs) of the Pb0.8Sn0.2Te solid solution, which were obtained by sublimation in quartz capillaries. The microscopic and X-ray investigations revealed that indium doped lead-tin telluride single crystals with uniform distribution of indium impurity can be grown by the zone sublimation method. The relationship between the method of treatment of the surface of indium doped lead- tin telluride WCs of the Pb0.8Sn0.2Te solid solution and the density of structural efects, microhardness, and electric parameters was found. Meglei, DragoşDîntu, MariaDonu, SofiaD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 9, Iss 2, Pp 156-158 (2010)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Meglei, Dragoş Dîntu, Maria Donu, Sofia Indium impurity effect on growth and structural perfect of lead-tin telluride wire crystals
description	In this work, we present the results of studying the indium impurity effect on the structural perfection of wire crystals (WCs) of the Pb0.8Sn0.2Te solid solution, which were obtained by sublimation in quartz capillaries. The microscopic and X-ray investigations revealed that indium doped lead-tin telluride single crystals with uniform distribution of indium impurity can be grown by the zone sublimation method. The relationship between the method of treatment of the surface of indium doped lead- tin telluride WCs of the Pb0.8Sn0.2Te solid solution and the density of structural efects, microhardness, and electric parameters was found.
format	article
author	Meglei, Dragoş Dîntu, Maria Donu, Sofia
author_facet	Meglei, Dragoş Dîntu, Maria Donu, Sofia
author_sort	Meglei, Dragoş
title	Indium impurity effect on growth and structural perfect of lead-tin telluride wire crystals
title_short	Indium impurity effect on growth and structural perfect of lead-tin telluride wire crystals
title_full	Indium impurity effect on growth and structural perfect of lead-tin telluride wire crystals
title_fullStr	Indium impurity effect on growth and structural perfect of lead-tin telluride wire crystals
title_full_unstemmed	Indium impurity effect on growth and structural perfect of lead-tin telluride wire crystals
title_sort	indium impurity effect on growth and structural perfect of lead-tin telluride wire crystals
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2010
url	https://doaj.org/article/75d986989f0e4f6caa9c7238be5b44a9
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Indium impurity effect on growth and structural perfect of lead-tin telluride wire crystals

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