Suppression of atom motion and metal deposition in mixed ionic electronic conductors

Mixed ionic–electronic conductors are limited by material decomposition. Here the authors reveal the mechanism for atom migration and deposition in Cu2–δ (S,Se) materials based on a critical chemical potential difference and propose electronically conducting, ion-blocking interfaces to enhance stabi...

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Auteurs principaux: Pengfei Qiu, Matthias T. Agne, Yongying Liu, Yaqin Zhu, Hongyi Chen, Tao Mao, Jiong Yang, Wenqing Zhang, Sossina M. Haile, Wolfgang G. Zeier, Jürgen Janek, Ctirad Uher, Xun Shi, Lidong Chen, G. Jeffrey Snyder
Format: article
Langue:EN
Publié: Nature Portfolio 2018
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Accès en ligne:https://doaj.org/article/75e341a85b2c4256bb22d261aab61ef7
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Résumé:Mixed ionic–electronic conductors are limited by material decomposition. Here the authors reveal the mechanism for atom migration and deposition in Cu2–δ (S,Se) materials based on a critical chemical potential difference and propose electronically conducting, ion-blocking interfaces to enhance stability.