Suppression of atom motion and metal deposition in mixed ionic electronic conductors

Mixed ionic–electronic conductors are limited by material decomposition. Here the authors reveal the mechanism for atom migration and deposition in Cu2–δ (S,Se) materials based on a critical chemical potential difference and propose electronically conducting, ion-blocking interfaces to enhance stabi...

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Autores principales: Pengfei Qiu, Matthias T. Agne, Yongying Liu, Yaqin Zhu, Hongyi Chen, Tao Mao, Jiong Yang, Wenqing Zhang, Sossina M. Haile, Wolfgang G. Zeier, Jürgen Janek, Ctirad Uher, Xun Shi, Lidong Chen, G. Jeffrey Snyder
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Lenguaje:EN
Publicado: Nature Portfolio 2018
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Acceso en línea:https://doaj.org/article/75e341a85b2c4256bb22d261aab61ef7
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spelling oai:doaj.org-article:75e341a85b2c4256bb22d261aab61ef72021-12-02T14:39:46ZSuppression of atom motion and metal deposition in mixed ionic electronic conductors10.1038/s41467-018-05248-82041-1723https://doaj.org/article/75e341a85b2c4256bb22d261aab61ef72018-07-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-05248-8https://doaj.org/toc/2041-1723Mixed ionic–electronic conductors are limited by material decomposition. Here the authors reveal the mechanism for atom migration and deposition in Cu2–δ (S,Se) materials based on a critical chemical potential difference and propose electronically conducting, ion-blocking interfaces to enhance stability.Pengfei QiuMatthias T. AgneYongying LiuYaqin ZhuHongyi ChenTao MaoJiong YangWenqing ZhangSossina M. HaileWolfgang G. ZeierJürgen JanekCtirad UherXun ShiLidong ChenG. Jeffrey SnyderNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-8 (2018)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Pengfei Qiu
Matthias T. Agne
Yongying Liu
Yaqin Zhu
Hongyi Chen
Tao Mao
Jiong Yang
Wenqing Zhang
Sossina M. Haile
Wolfgang G. Zeier
Jürgen Janek
Ctirad Uher
Xun Shi
Lidong Chen
G. Jeffrey Snyder
Suppression of atom motion and metal deposition in mixed ionic electronic conductors
description Mixed ionic–electronic conductors are limited by material decomposition. Here the authors reveal the mechanism for atom migration and deposition in Cu2–δ (S,Se) materials based on a critical chemical potential difference and propose electronically conducting, ion-blocking interfaces to enhance stability.
format article
author Pengfei Qiu
Matthias T. Agne
Yongying Liu
Yaqin Zhu
Hongyi Chen
Tao Mao
Jiong Yang
Wenqing Zhang
Sossina M. Haile
Wolfgang G. Zeier
Jürgen Janek
Ctirad Uher
Xun Shi
Lidong Chen
G. Jeffrey Snyder
author_facet Pengfei Qiu
Matthias T. Agne
Yongying Liu
Yaqin Zhu
Hongyi Chen
Tao Mao
Jiong Yang
Wenqing Zhang
Sossina M. Haile
Wolfgang G. Zeier
Jürgen Janek
Ctirad Uher
Xun Shi
Lidong Chen
G. Jeffrey Snyder
author_sort Pengfei Qiu
title Suppression of atom motion and metal deposition in mixed ionic electronic conductors
title_short Suppression of atom motion and metal deposition in mixed ionic electronic conductors
title_full Suppression of atom motion and metal deposition in mixed ionic electronic conductors
title_fullStr Suppression of atom motion and metal deposition in mixed ionic electronic conductors
title_full_unstemmed Suppression of atom motion and metal deposition in mixed ionic electronic conductors
title_sort suppression of atom motion and metal deposition in mixed ionic electronic conductors
publisher Nature Portfolio
publishDate 2018
url https://doaj.org/article/75e341a85b2c4256bb22d261aab61ef7
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