Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method

The Rashba splitting are found in the buckled square lattice. Here, by applying fully relativistic density-functional theory (DFT) calculation, we confirm the existence of the Rashba splitting in the conduction band minimum of various two-dimensional MX monochalcogenides (M = Ge, Sn and X = S, Se, T...

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Autores principales: Ibnu Jihad, Juhri Hendrawan, Adam Sukma Putra, Kuwat Triyana, Moh. Adhib Ulil Absor
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Lenguaje:EN
Publicado: Department of Chemistry, Universitas Gadjah Mada 2020
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Acceso en línea:https://doaj.org/article/75f8937a6d304a7da0f7675a325dd8e9
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spelling oai:doaj.org-article:75f8937a6d304a7da0f7675a325dd8e92021-12-02T12:11:49ZRashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method1411-94202460-157810.22146/ijc.49331https://doaj.org/article/75f8937a6d304a7da0f7675a325dd8e92020-05-01T00:00:00Zhttps://jurnal.ugm.ac.id/ijc/article/view/49331https://doaj.org/toc/1411-9420https://doaj.org/toc/2460-1578The Rashba splitting are found in the buckled square lattice. Here, by applying fully relativistic density-functional theory (DFT) calculation, we confirm the existence of the Rashba splitting in the conduction band minimum of various two-dimensional MX monochalcogenides (M = Ge, Sn and X = S, Se, Te) exhibiting a pair inplane Rashba rotation of the spin textures. A strong correlation has also been found between the size of the Rashba parameter and the atomic number of chalcogen atom for Γ and M point in the first Brillouin zone. Our investigation clarifies that the buckled square lattice are promising for inducing the substantial Rashba splitting suggesting that the present system is promising for spintronics device.Ibnu JihadJuhri HendrawanAdam Sukma PutraKuwat TriyanaMoh. Adhib Ulil AbsorDepartment of Chemistry, Universitas Gadjah Madaarticlege monochalcogenidessn monochalcogenidesdft methodspintronicssquare latticerashba effectspin texturesChemistryQD1-999ENIndonesian Journal of Chemistry, Vol 20, Iss 3, Pp 697-704 (2020)
institution DOAJ
collection DOAJ
language EN
topic ge monochalcogenides
sn monochalcogenides
dft method
spintronics
square lattice
rashba effect
spin textures
Chemistry
QD1-999
spellingShingle ge monochalcogenides
sn monochalcogenides
dft method
spintronics
square lattice
rashba effect
spin textures
Chemistry
QD1-999
Ibnu Jihad
Juhri Hendrawan
Adam Sukma Putra
Kuwat Triyana
Moh. Adhib Ulil Absor
Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method
description The Rashba splitting are found in the buckled square lattice. Here, by applying fully relativistic density-functional theory (DFT) calculation, we confirm the existence of the Rashba splitting in the conduction band minimum of various two-dimensional MX monochalcogenides (M = Ge, Sn and X = S, Se, Te) exhibiting a pair inplane Rashba rotation of the spin textures. A strong correlation has also been found between the size of the Rashba parameter and the atomic number of chalcogen atom for Γ and M point in the first Brillouin zone. Our investigation clarifies that the buckled square lattice are promising for inducing the substantial Rashba splitting suggesting that the present system is promising for spintronics device.
format article
author Ibnu Jihad
Juhri Hendrawan
Adam Sukma Putra
Kuwat Triyana
Moh. Adhib Ulil Absor
author_facet Ibnu Jihad
Juhri Hendrawan
Adam Sukma Putra
Kuwat Triyana
Moh. Adhib Ulil Absor
author_sort Ibnu Jihad
title Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method
title_short Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method
title_full Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method
title_fullStr Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method
title_full_unstemmed Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method
title_sort rashba effect on buckled square lattice ge and sn chalcogenides (mx, m=ge,sn, x=o,s,se,te) using dft method
publisher Department of Chemistry, Universitas Gadjah Mada
publishDate 2020
url https://doaj.org/article/75f8937a6d304a7da0f7675a325dd8e9
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