A two-dimensional electron–hole system in terms of the Chern–Simons theory: slowly varying field operators

In the previous paper [1], the conduction and the valence electrons of the two-dimensional (2D) semiconductor layer subjected to the action of an external perpendicular magnetic field and interacting with 2D quantum point vortices have been described in terms of the Chern–Simons (C–S) theory. The C–...

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Autores principales:	Moscalenco, Sveatoslav, Moscalenco, Vsevolod, Digor, Dumitru, Leleacov, Igor
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2017
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/766934af480a41f28bb33bb0dbdc98cc
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id	oai:doaj.org-article:766934af480a41f28bb33bb0dbdc98cc
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spelling	oai:doaj.org-article:766934af480a41f28bb33bb0dbdc98cc2021-11-21T11:56:44ZA two-dimensional electron–hole system in terms of the Chern–Simons theory: slowly varying field operators538.9:530.1452537-63651810-648Xhttps://doaj.org/article/766934af480a41f28bb33bb0dbdc98cc2017-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2017/article/71459https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365In the previous paper [1], the conduction and the valence electrons of the two-dimensional (2D) semiconductor layer subjected to the action of an external perpendicular magnetic field and interacting with 2D quantum point vortices have been described in terms of the Chern–Simons (C–S) theory. The C–S unitary transformation introducing the vector and scalar potentials generated by the quantum point vortices into the Hamiltonian and transforming the conduction and valence electrons into composite particles attaching them equal numbers of 2D quantum point vortices has been used. In the present paper, slowly varying envelope-type field operators are introduced. The initial Hamiltonian containing the periodic lattice potential and bare electron mass 0 m is transformed into the form with effective electron and hole masses, which determine the cyclotron frequencies of the Landau quantization in the presence of a C–S field.Moscalenco, SveatoslavMoscalenco, VsevolodDigor, DumitruLeleacov, IgorD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 16, Iss 3-4, Pp 173-181 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Moscalenco, Sveatoslav Moscalenco, Vsevolod Digor, Dumitru Leleacov, Igor A two-dimensional electron–hole system in terms of the Chern–Simons theory: slowly varying field operators
description	In the previous paper [1], the conduction and the valence electrons of the two-dimensional (2D) semiconductor layer subjected to the action of an external perpendicular magnetic field and interacting with 2D quantum point vortices have been described in terms of the Chern–Simons (C–S) theory. The C–S unitary transformation introducing the vector and scalar potentials generated by the quantum point vortices into the Hamiltonian and transforming the conduction and valence electrons into composite particles attaching them equal numbers of 2D quantum point vortices has been used. In the present paper, slowly varying envelope-type field operators are introduced. The initial Hamiltonian containing the periodic lattice potential and bare electron mass 0 m is transformed into the form with effective electron and hole masses, which determine the cyclotron frequencies of the Landau quantization in the presence of a C–S field.
format	article
author	Moscalenco, Sveatoslav Moscalenco, Vsevolod Digor, Dumitru Leleacov, Igor
author_facet	Moscalenco, Sveatoslav Moscalenco, Vsevolod Digor, Dumitru Leleacov, Igor
author_sort	Moscalenco, Sveatoslav
title	A two-dimensional electron–hole system in terms of the Chern–Simons theory: slowly varying field operators
title_short	A two-dimensional electron–hole system in terms of the Chern–Simons theory: slowly varying field operators
title_full	A two-dimensional electron–hole system in terms of the Chern–Simons theory: slowly varying field operators
title_fullStr	A two-dimensional electron–hole system in terms of the Chern–Simons theory: slowly varying field operators
title_full_unstemmed	A two-dimensional electron–hole system in terms of the Chern–Simons theory: slowly varying field operators
title_sort	two-dimensional electron–hole system in terms of the chern–simons theory: slowly varying field operators
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2017
url	https://doaj.org/article/766934af480a41f28bb33bb0dbdc98cc
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A two-dimensional electron–hole system in terms of the Chern–Simons theory: slowly varying field operators

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