Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge

Abstract Density functional supercell calculations of the Schottky barrier heights (SBH) of metal germanides and silicides on Si or Ge find that these vary with the facet, unlike those of elemental metals. In addition, silicides and germanides show a stronger dependence of their SBHs on the work fun...

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Autores principales: Hongfei Li, Yuzheng Guo, John Robertson
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Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/769cf18537ba4bfda7a7ba0a4677af79
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spelling oai:doaj.org-article:769cf18537ba4bfda7a7ba0a4677af792021-12-02T11:53:07ZFace Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge10.1038/s41598-017-16803-62045-2322https://doaj.org/article/769cf18537ba4bfda7a7ba0a4677af792017-11-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-16803-6https://doaj.org/toc/2045-2322Abstract Density functional supercell calculations of the Schottky barrier heights (SBH) of metal germanides and silicides on Si or Ge find that these vary with the facet, unlike those of elemental metals. In addition, silicides and germanides show a stronger dependence of their SBHs on the work function than those of elemental metals, as seen experimentally. Both effects are beyond the standard metal induced gap states model. NiSi2 is found to have a much lower SBH on n-Si(100) than on n-Si(111), as seen experimentally. It is shown how such results can be used to design lower SBH contacts for n-Ge, which are needed technologically. The SBHs of the better behaved Si/silicide interfaces can be used to benchmark the behavior of the less well behaved Ge-germanide interfaces for this purpose. The dependence of the SBH of epitaxial Pb-Si(111) on its reconstruction is also covered.Hongfei LiYuzheng GuoJohn RobertsonNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Hongfei Li
Yuzheng Guo
John Robertson
Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge
description Abstract Density functional supercell calculations of the Schottky barrier heights (SBH) of metal germanides and silicides on Si or Ge find that these vary with the facet, unlike those of elemental metals. In addition, silicides and germanides show a stronger dependence of their SBHs on the work function than those of elemental metals, as seen experimentally. Both effects are beyond the standard metal induced gap states model. NiSi2 is found to have a much lower SBH on n-Si(100) than on n-Si(111), as seen experimentally. It is shown how such results can be used to design lower SBH contacts for n-Ge, which are needed technologically. The SBHs of the better behaved Si/silicide interfaces can be used to benchmark the behavior of the less well behaved Ge-germanide interfaces for this purpose. The dependence of the SBH of epitaxial Pb-Si(111) on its reconstruction is also covered.
format article
author Hongfei Li
Yuzheng Guo
John Robertson
author_facet Hongfei Li
Yuzheng Guo
John Robertson
author_sort Hongfei Li
title Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge
title_short Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge
title_full Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge
title_fullStr Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge
title_full_unstemmed Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge
title_sort face dependence of schottky barriers heights of silicides and germanides on si and ge
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/769cf18537ba4bfda7a7ba0a4677af79
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AT johnrobertson facedependenceofschottkybarriersheightsofsilicidesandgermanidesonsiandge
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