An Optimized 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier
This paper proposes an optimal 4H-silicon carbide trench MOS barrier Schottky (TMBS) Rectifier. The optimal structure of this rectifier is achieved by adding an N− wrapping region at the P+ shielding of the conventional TMBS structure, which significantly reduces the depletion...
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2018
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oai:doaj.org-article:76a7866662c648e0877d03ed9d0976df2021-11-19T00:00:45ZAn Optimized 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier2168-673410.1109/JEDS.2018.2871066https://doaj.org/article/76a7866662c648e0877d03ed9d0976df2018-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8468035/https://doaj.org/toc/2168-6734This paper proposes an optimal 4H-silicon carbide trench MOS barrier Schottky (TMBS) Rectifier. The optimal structure of this rectifier is achieved by adding an N− wrapping region at the P+ shielding of the conventional TMBS structure, which significantly reduces the depletion region formed by the P+ shielding region. As a result, the proposed structure provides a lower ON-resistance comparing with the conventional P+ shielding structure. Moreover, we study the electric characteristics of the proposed structure via numerical simulation. Such a structure improves the specific ON-resistance and figure of merit of the conventional P+ shielding TMBS by 32.2% and 48.4%, respectively, and offers a high breakdown voltage, i.e., up to 1908 V.Ying WangWen-Ju WangCheng-Hao YuYi-Fei HuangYou-Lei SunJian-Xiang TangIEEEarticleTMBSbreakdown voltage (BV)specific ON-resistancefigure of merit (FoM)Electrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 6, Pp 1154-1158 (2018) |
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DOAJ |
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DOAJ |
| language |
EN |
| topic |
TMBS breakdown voltage (BV) specific ON-resistance figure of merit (FoM) Electrical engineering. Electronics. Nuclear engineering TK1-9971 |
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TMBS breakdown voltage (BV) specific ON-resistance figure of merit (FoM) Electrical engineering. Electronics. Nuclear engineering TK1-9971 Ying Wang Wen-Ju Wang Cheng-Hao Yu Yi-Fei Huang You-Lei Sun Jian-Xiang Tang An Optimized 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier |
| description |
This paper proposes an optimal 4H-silicon carbide trench MOS barrier Schottky (TMBS) Rectifier. The optimal structure of this rectifier is achieved by adding an N− wrapping region at the P+ shielding of the conventional TMBS structure, which significantly reduces the depletion region formed by the P+ shielding region. As a result, the proposed structure provides a lower ON-resistance comparing with the conventional P+ shielding structure. Moreover, we study the electric characteristics of the proposed structure via numerical simulation. Such a structure improves the specific ON-resistance and figure of merit of the conventional P+ shielding TMBS by 32.2% and 48.4%, respectively, and offers a high breakdown voltage, i.e., up to 1908 V. |
| format |
article |
| author |
Ying Wang Wen-Ju Wang Cheng-Hao Yu Yi-Fei Huang You-Lei Sun Jian-Xiang Tang |
| author_facet |
Ying Wang Wen-Ju Wang Cheng-Hao Yu Yi-Fei Huang You-Lei Sun Jian-Xiang Tang |
| author_sort |
Ying Wang |
| title |
An Optimized 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier |
| title_short |
An Optimized 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier |
| title_full |
An Optimized 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier |
| title_fullStr |
An Optimized 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier |
| title_full_unstemmed |
An Optimized 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier |
| title_sort |
optimized 4h-sic trench mos barrier schottky (tmbs) rectifier |
| publisher |
IEEE |
| publishDate |
2018 |
| url |
https://doaj.org/article/76a7866662c648e0877d03ed9d0976df |
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