An Optimized 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier
This paper proposes an optimal 4H-silicon carbide trench MOS barrier Schottky (TMBS) Rectifier. The optimal structure of this rectifier is achieved by adding an N− wrapping region at the P+ shielding of the conventional TMBS structure, which significantly reduces the depletion...
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| Auteurs principaux: | , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
IEEE
2018
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/76a7866662c648e0877d03ed9d0976df |
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