Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy

Gallium arsenide holds record efficiency for single junction solar cells, but high production costs limit applications. Here Metaferia et al. show high quality GaAs and GaInP at rates exceeding 300 and 200 micrometers per hour by dynamic hydride vapor phase epitaxy and > 25% efficient solar cells...

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Autores principales:	Wondwosen Metaferia, Kevin L. Schulte, John Simon, Steve Johnston, Aaron J. Ptak
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/76d3c17ba9bf4329a31118ee1649e1ba
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spelling	oai:doaj.org-article:76d3c17ba9bf4329a31118ee1649e1ba2021-12-02T16:58:15ZGallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy10.1038/s41467-019-11341-32041-1723https://doaj.org/article/76d3c17ba9bf4329a31118ee1649e1ba2019-07-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-11341-3https://doaj.org/toc/2041-1723Gallium arsenide holds record efficiency for single junction solar cells, but high production costs limit applications. Here Metaferia et al. show high quality GaAs and GaInP at rates exceeding 300 and 200 micrometers per hour by dynamic hydride vapor phase epitaxy and > 25% efficient solar cells.Wondwosen MetaferiaKevin L. SchulteJohn SimonSteve JohnstonAaron J. PtakNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Wondwosen Metaferia Kevin L. Schulte John Simon Steve Johnston Aaron J. Ptak Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy
description	Gallium arsenide holds record efficiency for single junction solar cells, but high production costs limit applications. Here Metaferia et al. show high quality GaAs and GaInP at rates exceeding 300 and 200 micrometers per hour by dynamic hydride vapor phase epitaxy and > 25% efficient solar cells.
format	article
author	Wondwosen Metaferia Kevin L. Schulte John Simon Steve Johnston Aaron J. Ptak
author_facet	Wondwosen Metaferia Kevin L. Schulte John Simon Steve Johnston Aaron J. Ptak
author_sort	Wondwosen Metaferia
title	Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy
title_short	Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy
title_full	Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy
title_fullStr	Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy
title_full_unstemmed	Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy
title_sort	gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/76d3c17ba9bf4329a31118ee1649e1ba
work_keys_str_mv	AT wondwosenmetaferia galliumarsenidesolarcellsgrownatratesexceeding300μmh1byhydridevaporphaseepitaxy AT kevinlschulte galliumarsenidesolarcellsgrownatratesexceeding300μmh1byhydridevaporphaseepitaxy AT johnsimon galliumarsenidesolarcellsgrownatratesexceeding300μmh1byhydridevaporphaseepitaxy AT stevejohnston galliumarsenidesolarcellsgrownatratesexceeding300μmh1byhydridevaporphaseepitaxy AT aaronjptak galliumarsenidesolarcellsgrownatratesexceeding300μmh1byhydridevaporphaseepitaxy
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Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy

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