CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor

Abstract LC CMOS voltage-controlled oscillators (VCOs) with tunable inductors are essential for high-performance, multi-band communication systems, such as IoT applications and 5G communication. However, VCOs that use CMOS tunable inductors have difficulty in achieving high RF performance due to the...

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Autores principales:	Uikyu Chae, Jeongsoo Park, Jeong-Geun Kim, Hyun-Yong Yu, Il-Joo Cho
Formato:	article
Lenguaje:	EN
Publicado:	SpringerOpen 2021
Materias:	CMOS VCO MEMS tunable inductor RF MEMS Technology T
Acceso en línea:	https://doaj.org/article/76dbe3bc5e6047cf9704192049a65b48
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spelling	oai:doaj.org-article:76dbe3bc5e6047cf9704192049a65b482021-11-28T12:04:53ZCMOS voltage-controlled oscillator with high-performance MEMS tunable inductor10.1186/s40486-021-00140-52213-9621https://doaj.org/article/76dbe3bc5e6047cf9704192049a65b482021-11-01T00:00:00Zhttps://doi.org/10.1186/s40486-021-00140-5https://doaj.org/toc/2213-9621Abstract LC CMOS voltage-controlled oscillators (VCOs) with tunable inductors are essential for high-performance, multi-band communication systems, such as IoT applications and 5G communication. However, VCOs that use CMOS tunable inductors have difficulty in achieving high RF performance due to the low Q-factor of the inductor. In addition, previously reported CMOS VCOs integrated with MEMS inductors have used CMOS switches for tuning frequency bands, but they also had large signal losses on the switch. Herein, we propose a CMOS VCO that is integrated with a MEMS tunable inductor that tunes the frequency band with three MEMS switches. The proposed MEMS tunable inductor enables us to achieve high RF performance due to the suspended structure, and RF MEMS switches enable lower signal loss than CMOS switches. In this work, we successfully fabricated the proposed CMOS VCO integrated with a MEMS tunable inductor using the flip-chip bonding process, and we measured oscillation frequencies according to the actuation of the three switches. The oscillation powers were measured as − 3.03 dBm @ 1.39 GHz, − 5.80 @ 1.98 GHz, − 7.44 dBm @ 2.81 GHz, and − 8.77 dBm @ 3.68 GHz.Uikyu ChaeJeongsoo ParkJeong-Geun KimHyun-Yong YuIl-Joo ChoSpringerOpenarticleCMOS VCOMEMS tunable inductorRF MEMSTechnologyTENMicro and Nano Systems Letters, Vol 9, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	CMOS VCO MEMS tunable inductor RF MEMS Technology T
spellingShingle	CMOS VCO MEMS tunable inductor RF MEMS Technology T Uikyu Chae Jeongsoo Park Jeong-Geun Kim Hyun-Yong Yu Il-Joo Cho CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor
description	Abstract LC CMOS voltage-controlled oscillators (VCOs) with tunable inductors are essential for high-performance, multi-band communication systems, such as IoT applications and 5G communication. However, VCOs that use CMOS tunable inductors have difficulty in achieving high RF performance due to the low Q-factor of the inductor. In addition, previously reported CMOS VCOs integrated with MEMS inductors have used CMOS switches for tuning frequency bands, but they also had large signal losses on the switch. Herein, we propose a CMOS VCO that is integrated with a MEMS tunable inductor that tunes the frequency band with three MEMS switches. The proposed MEMS tunable inductor enables us to achieve high RF performance due to the suspended structure, and RF MEMS switches enable lower signal loss than CMOS switches. In this work, we successfully fabricated the proposed CMOS VCO integrated with a MEMS tunable inductor using the flip-chip bonding process, and we measured oscillation frequencies according to the actuation of the three switches. The oscillation powers were measured as − 3.03 dBm @ 1.39 GHz, − 5.80 @ 1.98 GHz, − 7.44 dBm @ 2.81 GHz, and − 8.77 dBm @ 3.68 GHz.
format	article
author	Uikyu Chae Jeongsoo Park Jeong-Geun Kim Hyun-Yong Yu Il-Joo Cho
author_facet	Uikyu Chae Jeongsoo Park Jeong-Geun Kim Hyun-Yong Yu Il-Joo Cho
author_sort	Uikyu Chae
title	CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor
title_short	CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor
title_full	CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor
title_fullStr	CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor
title_full_unstemmed	CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor
title_sort	cmos voltage-controlled oscillator with high-performance mems tunable inductor
publisher	SpringerOpen
publishDate	2021
url	https://doaj.org/article/76dbe3bc5e6047cf9704192049a65b48
work_keys_str_mv	AT uikyuchae cmosvoltagecontrolledoscillatorwithhighperformancememstunableinductor AT jeongsoopark cmosvoltagecontrolledoscillatorwithhighperformancememstunableinductor AT jeonggeunkim cmosvoltagecontrolledoscillatorwithhighperformancememstunableinductor AT hyunyongyu cmosvoltagecontrolledoscillatorwithhighperformancememstunableinductor AT iljoocho cmosvoltagecontrolledoscillatorwithhighperformancememstunableinductor
_version_	1718408205147570176

CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor

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