Bandgap control in two-dimensional semiconductors via coherent doping of plasmonic hot electrons
The established means of bandgap control in semiconductors are based on chemical, electrical or optical doping. Here, the authors report wide bandgap modulations in monolayer WS2 at room temperature by coupling the 2D semiconductor to a self-assembled plasmonic crystal inducing coherent hot electron...
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| Autores principales: | , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/77493318e935423993040e75beef543a |
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| Sumario: | The established means of bandgap control in semiconductors are based on chemical, electrical or optical doping. Here, the authors report wide bandgap modulations in monolayer WS2 at room temperature by coupling the 2D semiconductor to a self-assembled plasmonic crystal inducing coherent hot electron doping. |
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