Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy
Domain walls in ferromagnetic–oxide structures can be moved using an electric field, which could be useful for low-power electronic devices. Here, the authors demonstrate the modulation of the velocity of these domain walls between a creep and a flow regime.
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| Autores principales: | , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2016
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/77814cb13c2b460aa04d7ede3579f4e4 |
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| Sumario: | Domain walls in ferromagnetic–oxide structures can be moved using an electric field, which could be useful for low-power electronic devices. Here, the authors demonstrate the modulation of the velocity of these domain walls between a creep and a flow regime. |
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