Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy

Domain walls in ferromagnetic–oxide structures can be moved using an electric field, which could be useful for low-power electronic devices. Here, the authors demonstrate the modulation of the velocity of these domain walls between a creep and a flow regime.

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Autores principales: Weiwei Lin, Nicolas Vernier, Guillaume Agnus, Karin Garcia, Berthold Ocker, Weisheng Zhao, Eric E. Fullerton, Dafiné Ravelosona
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2016
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Acceso en línea:https://doaj.org/article/77814cb13c2b460aa04d7ede3579f4e4
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