All-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature

By using 2D materials heterostructures it is possible to exploit the properties of both materials at the interface, for instance, spin-dependent transport for application in spintronic devices. Here, using a heterostructure of MoTe2/Graphene the authors demonstrate a proximity induced spin-galvanic...

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Autores principales: Anamul Md. Hoque, Dmitrii Khokhriakov, Klaus Zollner, Bing Zhao, Bogdan Karpiak, Jaroslav Fabian, Saroj P. Dash
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/788d683523974f6a828f23365c55ccd7
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spelling oai:doaj.org-article:788d683523974f6a828f23365c55ccd72021-12-02T14:59:28ZAll-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature10.1038/s42005-021-00611-62399-3650https://doaj.org/article/788d683523974f6a828f23365c55ccd72021-06-01T00:00:00Zhttps://doi.org/10.1038/s42005-021-00611-6https://doaj.org/toc/2399-3650By using 2D materials heterostructures it is possible to exploit the properties of both materials at the interface, for instance, spin-dependent transport for application in spintronic devices. Here, using a heterostructure of MoTe2/Graphene the authors demonstrate a proximity induced spin-galvanic effect which can be controlled by the gate voltage.Anamul Md. HoqueDmitrii KhokhriakovKlaus ZollnerBing ZhaoBogdan KarpiakJaroslav FabianSaroj P. DashNature PortfolioarticleAstrophysicsQB460-466PhysicsQC1-999ENCommunications Physics, Vol 4, Iss 1, Pp 1-9 (2021)
institution DOAJ
collection DOAJ
language EN
topic Astrophysics
QB460-466
Physics
QC1-999
spellingShingle Astrophysics
QB460-466
Physics
QC1-999
Anamul Md. Hoque
Dmitrii Khokhriakov
Klaus Zollner
Bing Zhao
Bogdan Karpiak
Jaroslav Fabian
Saroj P. Dash
All-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature
description By using 2D materials heterostructures it is possible to exploit the properties of both materials at the interface, for instance, spin-dependent transport for application in spintronic devices. Here, using a heterostructure of MoTe2/Graphene the authors demonstrate a proximity induced spin-galvanic effect which can be controlled by the gate voltage.
format article
author Anamul Md. Hoque
Dmitrii Khokhriakov
Klaus Zollner
Bing Zhao
Bogdan Karpiak
Jaroslav Fabian
Saroj P. Dash
author_facet Anamul Md. Hoque
Dmitrii Khokhriakov
Klaus Zollner
Bing Zhao
Bogdan Karpiak
Jaroslav Fabian
Saroj P. Dash
author_sort Anamul Md. Hoque
title All-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature
title_short All-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature
title_full All-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature
title_fullStr All-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature
title_full_unstemmed All-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature
title_sort all-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/788d683523974f6a828f23365c55ccd7
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