Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs

Abstract Single crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT). Electrochemical etching is used to slice off si...

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Autores principales:	Tzu-Hsuan Chang, Kanglin Xiong, Sung Hyun Park, Ge Yuan, Zhenqiang Ma, Jung Han
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/78b17a0546e242209a1dd0f8ba3b4206
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spelling	oai:doaj.org-article:78b17a0546e242209a1dd0f8ba3b42062021-12-02T11:53:01ZStrain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs10.1038/s41598-017-06957-82045-2322https://doaj.org/article/78b17a0546e242209a1dd0f8ba3b42062017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-06957-8https://doaj.org/toc/2045-2322Abstract Single crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT). Electrochemical etching is used to slice off single-crystalline AlGaN/GaN layers while preserving their microstructural quality. A double heterostructure design with a symmetric strain profile is employed to ensure minimal residual strain in freestanding NMs after release. The mobility of the two-dimensional electron gas (2DEG), formed by the AlGaN/GaN heterostructure, is noticeably superior to previously reported values of many other NMs. AlGaN/GaN nanomembrane HEMTs are fabricated on SiO2 and flexible polymeric substrates. Excellent electrical characteristics, including a high ON/OFF ratio and transconductance, suggest that III-Nitrides nanomembranes are capable of supporting high performance applications.Tzu-Hsuan ChangKanglin XiongSung Hyun ParkGe YuanZhenqiang MaJung HanNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Tzu-Hsuan Chang Kanglin Xiong Sung Hyun Park Ge Yuan Zhenqiang Ma Jung Han Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs
description	Abstract Single crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT). Electrochemical etching is used to slice off single-crystalline AlGaN/GaN layers while preserving their microstructural quality. A double heterostructure design with a symmetric strain profile is employed to ensure minimal residual strain in freestanding NMs after release. The mobility of the two-dimensional electron gas (2DEG), formed by the AlGaN/GaN heterostructure, is noticeably superior to previously reported values of many other NMs. AlGaN/GaN nanomembrane HEMTs are fabricated on SiO2 and flexible polymeric substrates. Excellent electrical characteristics, including a high ON/OFF ratio and transconductance, suggest that III-Nitrides nanomembranes are capable of supporting high performance applications.
format	article
author	Tzu-Hsuan Chang Kanglin Xiong Sung Hyun Park Ge Yuan Zhenqiang Ma Jung Han
author_facet	Tzu-Hsuan Chang Kanglin Xiong Sung Hyun Park Ge Yuan Zhenqiang Ma Jung Han
author_sort	Tzu-Hsuan Chang
title	Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs
title_short	Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs
title_full	Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs
title_fullStr	Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs
title_full_unstemmed	Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs
title_sort	strain balanced algan/gan/algan nanomembrane hemts
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/78b17a0546e242209a1dd0f8ba3b4206
work_keys_str_mv	AT tzuhsuanchang strainbalancedalganganalgannanomembranehemts AT kanglinxiong strainbalancedalganganalgannanomembranehemts AT sunghyunpark strainbalancedalganganalgannanomembranehemts AT geyuan strainbalancedalganganalgannanomembranehemts AT zhenqiangma strainbalancedalganganalgannanomembranehemts AT junghan strainbalancedalganganalgannanomembranehemts
_version_	1718394934285828096

Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs

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