Dimensional crossover in semiconductor nanostructures
Nanostructured materials offer a route to tuning the bandgap of a semiconductor. Here, the authors use single particle absorption spectroscopy to investigate bandgap evolution between cadmium selenide nanowires and quantum dots and identify the length at which a nanorod becomes zero-dimensional.
Guardado en:
Autores principales: | Matthew P. McDonald, Rusha Chatterjee, Jixin Si, Boldizsár Jankó, Masaru Kuno |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2016
|
Materias: | |
Acceso en línea: | https://doaj.org/article/78eb926d2b1e416582d6ab5d1f3717d1 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Fluorescence intermittency originates from reclustering in two-dimensional organic semiconductors
por: Anthony Ruth, et al.
Publicado: (2017) -
Tabby graphene: Dimensional magnetic crossover in fluorinated graphite
por: T. L. Makarova, et al.
Publicado: (2017) -
Magnetic ground state of an individual Fe2+ ion in strained semiconductor nanostructure
por: T. Smoleński, et al.
Publicado: (2016) -
Dimensional crossover in a layered ferromagnet detected by spin correlation driven distortions
por: A. Ron, et al.
Publicado: (2019) -
Reentrant Resistive Behavior and Dimensional Crossover in Disordered Superconducting TiN Films
por: Svetlana V. Postolova, et al.
Publicado: (2017)