Temperature dependency of excitonic effective mass and charge carrier conduction mechanism in CH3NH3PbI3−xClx thin films

Abstract In this paper we explain the temperature dependence of excitonic effective mass and charge carrier conduction mechanism occurs in CH3NH3PbI3−xClx thin films prepared by chemical dip coating (CDC), spray pyrolysis (Spray) and repeated dipping-withdrawing (Dipping). Hall Effect study confirme...

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Autores principales:	A. M. M. Tanveer Karim, M. K. R. Khan, M. S. Hossain
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/79210a5982cd43b6a448cdb0659dd87b
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spelling	oai:doaj.org-article:79210a5982cd43b6a448cdb0659dd87b2021-12-02T15:49:42ZTemperature dependency of excitonic effective mass and charge carrier conduction mechanism in CH3NH3PbI3−xClx thin films10.1038/s41598-021-90247-x2045-2322https://doaj.org/article/79210a5982cd43b6a448cdb0659dd87b2021-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-90247-xhttps://doaj.org/toc/2045-2322Abstract In this paper we explain the temperature dependence of excitonic effective mass and charge carrier conduction mechanism occurs in CH3NH3PbI3−xClx thin films prepared by chemical dip coating (CDC), spray pyrolysis (Spray) and repeated dipping-withdrawing (Dipping). Hall Effect study confirmed that prepared CH3NH3PbI3−xClx samples are p-type semiconductor having carrier concentration of the order of ~ 1016 cm−3. The charge carrier mobility, mean free path and mean free life time were found to decrease with increasing temperature due to polaronic effect. The excitonic effective mass is estimated to (0.090–0.196)me and excitonic binding energy (15–33) meV, well consistent with Wannier-Mott hydrogenic model and the nature of exciton is likely to be Mott-Wannier type. From electrical measurement, it was observed that charge carrier conduction in CH3NH3PbI3−xClx is governed by migration of $${\mathrm{I}}^{-}$$ I - and CH3N $${\mathrm{H}}_{3}^{+}$$ H 3 + vacancies and vacancy-assisted diffusion processes depending on temperature.A. M. M. Tanveer KarimM. K. R. KhanM. S. HossainNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q A. M. M. Tanveer Karim M. K. R. Khan M. S. Hossain Temperature dependency of excitonic effective mass and charge carrier conduction mechanism in CH3NH3PbI3−xClx thin films
description	Abstract In this paper we explain the temperature dependence of excitonic effective mass and charge carrier conduction mechanism occurs in CH3NH3PbI3−xClx thin films prepared by chemical dip coating (CDC), spray pyrolysis (Spray) and repeated dipping-withdrawing (Dipping). Hall Effect study confirmed that prepared CH3NH3PbI3−xClx samples are p-type semiconductor having carrier concentration of the order of ~ 1016 cm−3. The charge carrier mobility, mean free path and mean free life time were found to decrease with increasing temperature due to polaronic effect. The excitonic effective mass is estimated to (0.090–0.196)me and excitonic binding energy (15–33) meV, well consistent with Wannier-Mott hydrogenic model and the nature of exciton is likely to be Mott-Wannier type. From electrical measurement, it was observed that charge carrier conduction in CH3NH3PbI3−xClx is governed by migration of $${\mathrm{I}}^{-}$$ I - and CH3N $${\mathrm{H}}_{3}^{+}$$ H 3 + vacancies and vacancy-assisted diffusion processes depending on temperature.
format	article
author	A. M. M. Tanveer Karim M. K. R. Khan M. S. Hossain
author_facet	A. M. M. Tanveer Karim M. K. R. Khan M. S. Hossain
author_sort	A. M. M. Tanveer Karim
title	Temperature dependency of excitonic effective mass and charge carrier conduction mechanism in CH3NH3PbI3−xClx thin films
title_short	Temperature dependency of excitonic effective mass and charge carrier conduction mechanism in CH3NH3PbI3−xClx thin films
title_full	Temperature dependency of excitonic effective mass and charge carrier conduction mechanism in CH3NH3PbI3−xClx thin films
title_fullStr	Temperature dependency of excitonic effective mass and charge carrier conduction mechanism in CH3NH3PbI3−xClx thin films
title_full_unstemmed	Temperature dependency of excitonic effective mass and charge carrier conduction mechanism in CH3NH3PbI3−xClx thin films
title_sort	temperature dependency of excitonic effective mass and charge carrier conduction mechanism in ch3nh3pbi3−xclx thin films
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/79210a5982cd43b6a448cdb0659dd87b
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_version_	1718385699136208896

Temperature dependency of excitonic effective mass and charge carrier conduction mechanism in CH3NH3PbI3−xClx thin films

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