The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors

Abstract Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the emergence of these effects are not yet ful...

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Autores principales:	Jorge Quereda, Jan Hidding, Talieh S. Ghiasi, Bart J. van Wees, Caspar H. van der Wal, Marcos H. D. Guimarães
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/7946b99eedd74ee0b6696669c1fa57ab
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spelling	oai:doaj.org-article:7946b99eedd74ee0b6696669c1fa57ab2021-12-02T13:49:54ZThe role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors10.1038/s41699-020-00194-w2397-7132https://doaj.org/article/7946b99eedd74ee0b6696669c1fa57ab2021-01-01T00:00:00Zhttps://doi.org/10.1038/s41699-020-00194-whttps://doaj.org/toc/2397-7132Abstract Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the emergence of these effects are not yet fully understood. In particular, the emergence of CPGE is not compatible with the D3h crystal symmetry of two-dimensional TMDs, and should only be possible if the symmetry of the electronic states is reduced by influences such as an external electric field or mechanical strain. Schottky contacts, nearly ubiquitous in TMD-based transistors, can provide the high electric fields causing a symmetry breaking in the devices. Here, we investigate the effect of these Schottky contacts on the CPC by characterizing the helicity-dependent photoresponse of monolayer MoSe2 devices both with direct metal-MoSe2 Schottky contacts and with h-BN tunnel barriers at the contacts. We find that, when Schottky barriers are present in the device, additional contributions to CPC become allowed, resulting in emergence of CPC for illumination at normal incidence.Jorge QueredaJan HiddingTalieh S. GhiasiBart J. van WeesCaspar H. van der WalMarcos H. D. GuimarãesNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 Jorge Quereda Jan Hidding Talieh S. Ghiasi Bart J. van Wees Caspar H. van der Wal Marcos H. D. Guimarães The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors
description	Abstract Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the emergence of these effects are not yet fully understood. In particular, the emergence of CPGE is not compatible with the D3h crystal symmetry of two-dimensional TMDs, and should only be possible if the symmetry of the electronic states is reduced by influences such as an external electric field or mechanical strain. Schottky contacts, nearly ubiquitous in TMD-based transistors, can provide the high electric fields causing a symmetry breaking in the devices. Here, we investigate the effect of these Schottky contacts on the CPC by characterizing the helicity-dependent photoresponse of monolayer MoSe2 devices both with direct metal-MoSe2 Schottky contacts and with h-BN tunnel barriers at the contacts. We find that, when Schottky barriers are present in the device, additional contributions to CPC become allowed, resulting in emergence of CPC for illumination at normal incidence.
format	article
author	Jorge Quereda Jan Hidding Talieh S. Ghiasi Bart J. van Wees Caspar H. van der Wal Marcos H. D. Guimarães
author_facet	Jorge Quereda Jan Hidding Talieh S. Ghiasi Bart J. van Wees Caspar H. van der Wal Marcos H. D. Guimarães
author_sort	Jorge Quereda
title	The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors
title_short	The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors
title_full	The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors
title_fullStr	The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors
title_full_unstemmed	The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors
title_sort	role of device asymmetries and schottky barriers on the helicity-dependent photoresponse of 2d phototransistors
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/7946b99eedd74ee0b6696669c1fa57ab
work_keys_str_mv	AT jorgequereda theroleofdeviceasymmetriesandschottkybarriersonthehelicitydependentphotoresponseof2dphototransistors AT janhidding theroleofdeviceasymmetriesandschottkybarriersonthehelicitydependentphotoresponseof2dphototransistors AT taliehsghiasi theroleofdeviceasymmetriesandschottkybarriersonthehelicitydependentphotoresponseof2dphototransistors AT bartjvanwees theroleofdeviceasymmetriesandschottkybarriersonthehelicitydependentphotoresponseof2dphototransistors AT casparhvanderwal theroleofdeviceasymmetriesandschottkybarriersonthehelicitydependentphotoresponseof2dphototransistors AT marcoshdguimaraes theroleofdeviceasymmetriesandschottkybarriersonthehelicitydependentphotoresponseof2dphototransistors AT jorgequereda roleofdeviceasymmetriesandschottkybarriersonthehelicitydependentphotoresponseof2dphototransistors AT janhidding roleofdeviceasymmetriesandschottkybarriersonthehelicitydependentphotoresponseof2dphototransistors AT taliehsghiasi roleofdeviceasymmetriesandschottkybarriersonthehelicitydependentphotoresponseof2dphototransistors AT bartjvanwees roleofdeviceasymmetriesandschottkybarriersonthehelicitydependentphotoresponseof2dphototransistors AT casparhvanderwal roleofdeviceasymmetriesandschottkybarriersonthehelicitydependentphotoresponseof2dphototransistors AT marcoshdguimaraes roleofdeviceasymmetriesandschottkybarriersonthehelicitydependentphotoresponseof2dphototransistors
_version_	1718392446072651776

The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors

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