The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors

Abstract Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the emergence of these effects are not yet ful...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Jorge Quereda, Jan Hidding, Talieh S. Ghiasi, Bart J. van Wees, Caspar H. van der Wal, Marcos H. D. Guimarães
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
Acceso en línea:https://doaj.org/article/7946b99eedd74ee0b6696669c1fa57ab
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares