Simulation of gas sensing mechanism of porous metal oxide semiconductor sensor based on finite element analysis

Abstract In recent years, finite element analysis is increasingly adopted to simulate the mechanism of metal oxide semiconductor (MOS) resistive gas sensors. In this article, the chemical reaction engineering module in the COMSOL Multiphysics tool is used to describe the dynamic equilibrium process...

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Autores principales:	Songlin Li, Min Zhang, Hai Wang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/79a7b9ed15b94eafb1005fe1491d6b33
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spelling	oai:doaj.org-article:79a7b9ed15b94eafb1005fe1491d6b332021-12-02T15:09:23ZSimulation of gas sensing mechanism of porous metal oxide semiconductor sensor based on finite element analysis10.1038/s41598-021-96591-22045-2322https://doaj.org/article/79a7b9ed15b94eafb1005fe1491d6b332021-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-96591-2https://doaj.org/toc/2045-2322Abstract In recent years, finite element analysis is increasingly adopted to simulate the mechanism of metal oxide semiconductor (MOS) resistive gas sensors. In this article, the chemical reaction engineering module in the COMSOL Multiphysics tool is used to describe the dynamic equilibrium process of oxygen ions in the sensor. The boundary conditions of temperature transfer, conductivity model, and mass transfer are applied to simulate the convection, diffusion, and penetration processes. The response of the sensor at different temperatures (445 K–521 K) and different target gas concentrations (1–500 ppm) is simulated. In this paper, the dynamic model of oxygen ions is used creatively as a bridge between gas concentration and sensor response instead of the traditional direct parameter fitting method. The simulated result of the surface oxygen ion control and permeability control model of the MOS gas sensor shows a good agreement with the real sensor. For explaining the principle of metal oxide semiconductor gas sensors simulations has been performed on COMSOL Multiphysics software. The proposed method in this paper is based on the underlying transfer logic of the sensor signal, it is expected to predict the sensor signal and assist the sensor design.Songlin LiMin ZhangHai WangNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Songlin Li Min Zhang Hai Wang Simulation of gas sensing mechanism of porous metal oxide semiconductor sensor based on finite element analysis
description	Abstract In recent years, finite element analysis is increasingly adopted to simulate the mechanism of metal oxide semiconductor (MOS) resistive gas sensors. In this article, the chemical reaction engineering module in the COMSOL Multiphysics tool is used to describe the dynamic equilibrium process of oxygen ions in the sensor. The boundary conditions of temperature transfer, conductivity model, and mass transfer are applied to simulate the convection, diffusion, and penetration processes. The response of the sensor at different temperatures (445 K–521 K) and different target gas concentrations (1–500 ppm) is simulated. In this paper, the dynamic model of oxygen ions is used creatively as a bridge between gas concentration and sensor response instead of the traditional direct parameter fitting method. The simulated result of the surface oxygen ion control and permeability control model of the MOS gas sensor shows a good agreement with the real sensor. For explaining the principle of metal oxide semiconductor gas sensors simulations has been performed on COMSOL Multiphysics software. The proposed method in this paper is based on the underlying transfer logic of the sensor signal, it is expected to predict the sensor signal and assist the sensor design.
format	article
author	Songlin Li Min Zhang Hai Wang
author_facet	Songlin Li Min Zhang Hai Wang
author_sort	Songlin Li
title	Simulation of gas sensing mechanism of porous metal oxide semiconductor sensor based on finite element analysis
title_short	Simulation of gas sensing mechanism of porous metal oxide semiconductor sensor based on finite element analysis
title_full	Simulation of gas sensing mechanism of porous metal oxide semiconductor sensor based on finite element analysis
title_fullStr	Simulation of gas sensing mechanism of porous metal oxide semiconductor sensor based on finite element analysis
title_full_unstemmed	Simulation of gas sensing mechanism of porous metal oxide semiconductor sensor based on finite element analysis
title_sort	simulation of gas sensing mechanism of porous metal oxide semiconductor sensor based on finite element analysis
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/79a7b9ed15b94eafb1005fe1491d6b33
work_keys_str_mv	AT songlinli simulationofgassensingmechanismofporousmetaloxidesemiconductorsensorbasedonfiniteelementanalysis AT minzhang simulationofgassensingmechanismofporousmetaloxidesemiconductorsensorbasedonfiniteelementanalysis AT haiwang simulationofgassensingmechanismofporousmetaloxidesemiconductorsensorbasedonfiniteelementanalysis
_version_	1718387822734344192

Simulation of gas sensing mechanism of porous metal oxide semiconductor sensor based on finite element analysis

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