Simulation of gas sensing mechanism of porous metal oxide semiconductor sensor based on finite element analysis

Abstract In recent years, finite element analysis is increasingly adopted to simulate the mechanism of metal oxide semiconductor (MOS) resistive gas sensors. In this article, the chemical reaction engineering module in the COMSOL Multiphysics tool is used to describe the dynamic equilibrium process...

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Bibliographic Details
Main Authors: Songlin Li, Min Zhang, Hai Wang
Format: article
Language:EN
Published: Nature Portfolio 2021
Subjects:
R
Q
Online Access:https://doaj.org/article/79a7b9ed15b94eafb1005fe1491d6b33
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