Engineering of III-Nitride Semiconductors on Low Temperature Co-fired Ceramics

Abstract This work presents results in the field of advanced substrate solutions in order to achieve high crystalline quality group-III nitrides based heterostructures for high frequency and power devices or for sensor applications. With that objective, Low Temperature Co-fired Ceramics has been use...

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Autores principales:	J. M. Mánuel, J. J. Jiménez, F. M. Morales, B. Lacroix, A. J. Santos, R. García, E. Blanco, M. Domínguez, M. Ramírez, A. M. Beltrán, D. Alexandrov, J. Tot, R. Dubreuil, V. Videkov, S. Andreev, B. Tzaneva, H. Bartsch, J. Breiling, J. Pezoldt, M. Fischer, J. Müller
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/79af413740f341f3abded008f14f528f
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spelling	oai:doaj.org-article:79af413740f341f3abded008f14f528f2021-12-02T15:07:57ZEngineering of III-Nitride Semiconductors on Low Temperature Co-fired Ceramics10.1038/s41598-018-25416-62045-2322https://doaj.org/article/79af413740f341f3abded008f14f528f2018-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-25416-6https://doaj.org/toc/2045-2322Abstract This work presents results in the field of advanced substrate solutions in order to achieve high crystalline quality group-III nitrides based heterostructures for high frequency and power devices or for sensor applications. With that objective, Low Temperature Co-fired Ceramics has been used, as a non-crystalline substrate. Structures like these have never been developed before, and for economic reasons will represent a groundbreaking material in these fields of Electronic. In this sense, the report presents the characterization through various techniques of three series of specimens where GaN was deposited on this ceramic composite, using different buffer layers, and a singular metal-organic chemical vapor deposition related technique for low temperature deposition. Other single crystalline ceramic-based templates were also utilized as substrate materials, for comparison purposes.J. M. MánuelJ. J. JiménezF. M. MoralesB. LacroixA. J. SantosR. GarcíaE. BlancoM. DomínguezM. RamírezA. M. BeltránD. AlexandrovJ. TotR. DubreuilV. VidekovS. AndreevB. TzanevaH. BartschJ. BreilingJ. PezoldtM. FischerJ. MüllerNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-14 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q J. M. Mánuel J. J. Jiménez F. M. Morales B. Lacroix A. J. Santos R. García E. Blanco M. Domínguez M. Ramírez A. M. Beltrán D. Alexandrov J. Tot R. Dubreuil V. Videkov S. Andreev B. Tzaneva H. Bartsch J. Breiling J. Pezoldt M. Fischer J. Müller Engineering of III-Nitride Semiconductors on Low Temperature Co-fired Ceramics
description	Abstract This work presents results in the field of advanced substrate solutions in order to achieve high crystalline quality group-III nitrides based heterostructures for high frequency and power devices or for sensor applications. With that objective, Low Temperature Co-fired Ceramics has been used, as a non-crystalline substrate. Structures like these have never been developed before, and for economic reasons will represent a groundbreaking material in these fields of Electronic. In this sense, the report presents the characterization through various techniques of three series of specimens where GaN was deposited on this ceramic composite, using different buffer layers, and a singular metal-organic chemical vapor deposition related technique for low temperature deposition. Other single crystalline ceramic-based templates were also utilized as substrate materials, for comparison purposes.
format	article
author	J. M. Mánuel J. J. Jiménez F. M. Morales B. Lacroix A. J. Santos R. García E. Blanco M. Domínguez M. Ramírez A. M. Beltrán D. Alexandrov J. Tot R. Dubreuil V. Videkov S. Andreev B. Tzaneva H. Bartsch J. Breiling J. Pezoldt M. Fischer J. Müller
author_facet	J. M. Mánuel J. J. Jiménez F. M. Morales B. Lacroix A. J. Santos R. García E. Blanco M. Domínguez M. Ramírez A. M. Beltrán D. Alexandrov J. Tot R. Dubreuil V. Videkov S. Andreev B. Tzaneva H. Bartsch J. Breiling J. Pezoldt M. Fischer J. Müller
author_sort	J. M. Mánuel
title	Engineering of III-Nitride Semiconductors on Low Temperature Co-fired Ceramics
title_short	Engineering of III-Nitride Semiconductors on Low Temperature Co-fired Ceramics
title_full	Engineering of III-Nitride Semiconductors on Low Temperature Co-fired Ceramics
title_fullStr	Engineering of III-Nitride Semiconductors on Low Temperature Co-fired Ceramics
title_full_unstemmed	Engineering of III-Nitride Semiconductors on Low Temperature Co-fired Ceramics
title_sort	engineering of iii-nitride semiconductors on low temperature co-fired ceramics
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/79af413740f341f3abded008f14f528f
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Engineering of III-Nitride Semiconductors on Low Temperature Co-fired Ceramics

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