Optoelectronic mixing with high-frequency graphene transistors
Here, the authors report optoelectronic mixing up to 67 GHz using high-frequency back-gated graphene field effect transistors (GFETs). These devices mix an electrical signal injected into the GFET gate and a modulated optical signal onto a single layer graphene channel.
Enregistré dans:
| Auteurs principaux: | , , , , , , , , , |
|---|---|
| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2021
|
| Sujets: | |
| Accès en ligne: | https://doaj.org/article/79c0c0d231324053a7d93d22cb71996d |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| Résumé: | Here, the authors report optoelectronic mixing up to 67 GHz using high-frequency back-gated graphene field effect transistors (GFETs). These devices mix an electrical signal injected into the GFET gate and a modulated optical signal onto a single layer graphene channel. |
|---|