Optoelectronic mixing with high-frequency graphene transistors

Optoelectronic mixing with high-frequency graphene transistors

Here, the authors report optoelectronic mixing up to 67 GHz using high-frequency back-gated graphene field effect transistors (GFETs). These devices mix an electrical signal injected into the GFET gate and a modulated optical signal onto a single layer graphene channel.

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Detalles Bibliográficos
Autores principales: A. Montanaro, W. Wei, D. De Fazio, U. Sassi, G. Soavi, P. Aversa, A. C. Ferrari, H. Happy, P. Legagneux, E. Pallecchi
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
Science
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Acceso en línea:https://doaj.org/article/79c0c0d231324053a7d93d22cb71996d
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