Polar and phase domain walls with conducting interfacial states in a Weyl semimetal MoTe2

Domain walls of topological materials may be good candidates to study topological interfacial states. Here, Huang et al. discover polar domain walls which can be manipulated by electron beams and phase domain walls where possible signature of a conducting hinge state is detected in Weyl semimetal Mo...

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Autores principales: Fei-Ting Huang, Seong Joon Lim, Sobhit Singh, Jinwoong Kim, Lunyong Zhang, Jae-Wook Kim, Ming-Wen Chu, Karin M. Rabe, David Vanderbilt, Sang-Wook Cheong
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
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Acceso en línea:https://doaj.org/article/7ac3965d499847e5abc10771e2fc75f6
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Sumario:Domain walls of topological materials may be good candidates to study topological interfacial states. Here, Huang et al. discover polar domain walls which can be manipulated by electron beams and phase domain walls where possible signature of a conducting hinge state is detected in Weyl semimetal MoTe2.