Poly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS2 homojunction photodiode

Poly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS2 homojunction photodiode

Two-dimensional MoS2 homojunctions, considered potential building blocks for next generation flexible electronics, currently suffer from quick degradation. Here, Zhang and co-workers use a self-healing sulfur vacancy mechanism to produce a MoS2photodiode that possesses long term stability.

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Detalles Bibliográficos
Autores principales: Xiankun Zhang, Qingliang Liao, Shuo Liu, Zhuo Kang, Zheng Zhang, Junli Du, Feng Li, Shuhao Zhang, Jiankun Xiao, Baishan Liu, Yang Ou, Xiaozhi Liu, Lin Gu, Yue Zhang
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
Science
Q
Acceso en línea:https://doaj.org/article/7b00e575e5de48758dedfecf659a71ed
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