Features of electron gas in InAs nanowires imposed by interplay between nanowire geometry, doping and surface states

Abstract We present a study of electron gas properties in InAs nanowires determined by interaction between nanowire geometry, doping and surface states. The electron gas density and space distribution are calculated via self-consistent solution of coupled Schroedinger and Poisson equations in the na...

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Autores principales:	V. E. Degtyarev, S. V. Khazanova, N. V. Demarina
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/7ba4ca54a9574e279f3be39eb6a00eca
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spelling	oai:doaj.org-article:7ba4ca54a9574e279f3be39eb6a00eca2021-12-02T15:06:16ZFeatures of electron gas in InAs nanowires imposed by interplay between nanowire geometry, doping and surface states10.1038/s41598-017-03415-32045-2322https://doaj.org/article/7ba4ca54a9574e279f3be39eb6a00eca2017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-03415-3https://doaj.org/toc/2045-2322Abstract We present a study of electron gas properties in InAs nanowires determined by interaction between nanowire geometry, doping and surface states. The electron gas density and space distribution are calculated via self-consistent solution of coupled Schroedinger and Poisson equations in the nanowires with a hexagonal cross-section. We show that the density of surface states and the nanowire width define the spatial distribution of the electrons. Three configurations can be distinguished, namely the electrons are localized in the center of the wire, or they are arranged in a uniform tubular distribution, or finally in a tubular distribution with additional electron accumulation at the corners of the nanowire. The latter one is dominating for most experimentally obtained nanowires. N-type doping partly suppresses electron accumulation at the nanowire corners. The electron density calculated for both, various nanowire widths and different positions of the Fermi level at the nanowire surface, is compared with the experimental data for intrinsic InAs nanowires. Suitable agreement is obtained by assuming a Fermi level pinning at 60 to 100 meV above the conduction band edge, leading to a tubular electron distribution with accumulation along the corners of the nanowire.V. E. DegtyarevS. V. KhazanovaN. V. DemarinaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q V. E. Degtyarev S. V. Khazanova N. V. Demarina Features of electron gas in InAs nanowires imposed by interplay between nanowire geometry, doping and surface states
description	Abstract We present a study of electron gas properties in InAs nanowires determined by interaction between nanowire geometry, doping and surface states. The electron gas density and space distribution are calculated via self-consistent solution of coupled Schroedinger and Poisson equations in the nanowires with a hexagonal cross-section. We show that the density of surface states and the nanowire width define the spatial distribution of the electrons. Three configurations can be distinguished, namely the electrons are localized in the center of the wire, or they are arranged in a uniform tubular distribution, or finally in a tubular distribution with additional electron accumulation at the corners of the nanowire. The latter one is dominating for most experimentally obtained nanowires. N-type doping partly suppresses electron accumulation at the nanowire corners. The electron density calculated for both, various nanowire widths and different positions of the Fermi level at the nanowire surface, is compared with the experimental data for intrinsic InAs nanowires. Suitable agreement is obtained by assuming a Fermi level pinning at 60 to 100 meV above the conduction band edge, leading to a tubular electron distribution with accumulation along the corners of the nanowire.
format	article
author	V. E. Degtyarev S. V. Khazanova N. V. Demarina
author_facet	V. E. Degtyarev S. V. Khazanova N. V. Demarina
author_sort	V. E. Degtyarev
title	Features of electron gas in InAs nanowires imposed by interplay between nanowire geometry, doping and surface states
title_short	Features of electron gas in InAs nanowires imposed by interplay between nanowire geometry, doping and surface states
title_full	Features of electron gas in InAs nanowires imposed by interplay between nanowire geometry, doping and surface states
title_fullStr	Features of electron gas in InAs nanowires imposed by interplay between nanowire geometry, doping and surface states
title_full_unstemmed	Features of electron gas in InAs nanowires imposed by interplay between nanowire geometry, doping and surface states
title_sort	features of electron gas in inas nanowires imposed by interplay between nanowire geometry, doping and surface states
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/7ba4ca54a9574e279f3be39eb6a00eca
work_keys_str_mv	AT vedegtyarev featuresofelectrongasininasnanowiresimposedbyinterplaybetweennanowiregeometrydopingandsurfacestates AT svkhazanova featuresofelectrongasininasnanowiresimposedbyinterplaybetweennanowiregeometrydopingandsurfacestates AT nvdemarina featuresofelectrongasininasnanowiresimposedbyinterplaybetweennanowiregeometrydopingandsurfacestates
_version_	1718388522869587968

Features of electron gas in InAs nanowires imposed by interplay between nanowire geometry, doping and surface states

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