Resistive switching in nano-structures
Abstract Solid state memory and switching devices aimed at replacing the flash memory technology operate by switching from the high to low resistance when conductive filaments are created in response to the electric pulse. The filaments are identified with either structurally different protrusions o...
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| Auteurs principaux: | , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2018
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| Accès en ligne: | https://doaj.org/article/7c999b0dbd4a4b3eb03a11fb923f3965 |
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