The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3

Abstract A pressing challenge in engineering devices with topological insulators (TIs) is that electron transport is dominated by the bulk conductance, and so dissipationless surface states account for only a small fraction of the conductance. Enhancing the surface-to-volume ratio is a common method...

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Autores principales: Maciej Wiesner, Richard H. Roberts, Jung-Fu. Lin, Deji Akinwande, Thorsten Hesjedal, Liam B. Duffy, Shumin Wang, Yuxin Song, Jacek Jenczyk, Stefan Jurga, Boguslaw Mroz
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Publicado: Nature Portfolio 2019
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spelling oai:doaj.org-article:7cbb57d9f47243fd9fe0c042c93935b12021-12-02T15:09:12ZThe effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te310.1038/s41598-019-42598-92045-2322https://doaj.org/article/7cbb57d9f47243fd9fe0c042c93935b12019-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-019-42598-9https://doaj.org/toc/2045-2322Abstract A pressing challenge in engineering devices with topological insulators (TIs) is that electron transport is dominated by the bulk conductance, and so dissipationless surface states account for only a small fraction of the conductance. Enhancing the surface-to-volume ratio is a common method to enhance the relative contribution of such states. In thin films with reduced thickness, the confinement results in symmetry-breaking and is critical for the experimental observation of topologically protected surface states. We employ micro-Raman and tip-enhanced Raman spectroscopy to examine three different mechanisms of symmetry breaking in Bi2Te3 TI thin films: surface plasmon generation, charge transfer, and application of a periodic strain potential. These mechanisms are facilitated by semiconducting and insulating substrates that modify the electronic and mechanical conditions at the sample surface and alter the long-range interactions between Bi2Te3 and the substrate. We confirm the symmetry breaking in Bi2Te3 via the emergence of the Raman-forbidden $${{\boldsymbol{A}}}_{{\bf{1}}{\boldsymbol{u}}}^{{\bf{2}}}$$ A1u2 mode. Our results suggest that topological surface states can exist at the Bi2Te3/substrate interface, which is in a good agreement with previous theoretical results predicting the tunability of the vertical location of helical surface states in TI/substrate heterostructures.Maciej WiesnerRichard H. RobertsJung-Fu. LinDeji AkinwandeThorsten HesjedalLiam B. DuffyShumin WangYuxin SongJacek JenczykStefan JurgaBoguslaw MrozNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 9, Iss 1, Pp 1-8 (2019)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Maciej Wiesner
Richard H. Roberts
Jung-Fu. Lin
Deji Akinwande
Thorsten Hesjedal
Liam B. Duffy
Shumin Wang
Yuxin Song
Jacek Jenczyk
Stefan Jurga
Boguslaw Mroz
The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3
description Abstract A pressing challenge in engineering devices with topological insulators (TIs) is that electron transport is dominated by the bulk conductance, and so dissipationless surface states account for only a small fraction of the conductance. Enhancing the surface-to-volume ratio is a common method to enhance the relative contribution of such states. In thin films with reduced thickness, the confinement results in symmetry-breaking and is critical for the experimental observation of topologically protected surface states. We employ micro-Raman and tip-enhanced Raman spectroscopy to examine three different mechanisms of symmetry breaking in Bi2Te3 TI thin films: surface plasmon generation, charge transfer, and application of a periodic strain potential. These mechanisms are facilitated by semiconducting and insulating substrates that modify the electronic and mechanical conditions at the sample surface and alter the long-range interactions between Bi2Te3 and the substrate. We confirm the symmetry breaking in Bi2Te3 via the emergence of the Raman-forbidden $${{\boldsymbol{A}}}_{{\bf{1}}{\boldsymbol{u}}}^{{\bf{2}}}$$ A1u2 mode. Our results suggest that topological surface states can exist at the Bi2Te3/substrate interface, which is in a good agreement with previous theoretical results predicting the tunability of the vertical location of helical surface states in TI/substrate heterostructures.
format article
author Maciej Wiesner
Richard H. Roberts
Jung-Fu. Lin
Deji Akinwande
Thorsten Hesjedal
Liam B. Duffy
Shumin Wang
Yuxin Song
Jacek Jenczyk
Stefan Jurga
Boguslaw Mroz
author_facet Maciej Wiesner
Richard H. Roberts
Jung-Fu. Lin
Deji Akinwande
Thorsten Hesjedal
Liam B. Duffy
Shumin Wang
Yuxin Song
Jacek Jenczyk
Stefan Jurga
Boguslaw Mroz
author_sort Maciej Wiesner
title The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3
title_short The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3
title_full The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3
title_fullStr The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3
title_full_unstemmed The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3
title_sort effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator bi2te3
publisher Nature Portfolio
publishDate 2019
url https://doaj.org/article/7cbb57d9f47243fd9fe0c042c93935b1
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