The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3
Abstract A pressing challenge in engineering devices with topological insulators (TIs) is that electron transport is dominated by the bulk conductance, and so dissipationless surface states account for only a small fraction of the conductance. Enhancing the surface-to-volume ratio is a common method...
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oai:doaj.org-article:7cbb57d9f47243fd9fe0c042c93935b12021-12-02T15:09:12ZThe effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te310.1038/s41598-019-42598-92045-2322https://doaj.org/article/7cbb57d9f47243fd9fe0c042c93935b12019-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-019-42598-9https://doaj.org/toc/2045-2322Abstract A pressing challenge in engineering devices with topological insulators (TIs) is that electron transport is dominated by the bulk conductance, and so dissipationless surface states account for only a small fraction of the conductance. Enhancing the surface-to-volume ratio is a common method to enhance the relative contribution of such states. In thin films with reduced thickness, the confinement results in symmetry-breaking and is critical for the experimental observation of topologically protected surface states. We employ micro-Raman and tip-enhanced Raman spectroscopy to examine three different mechanisms of symmetry breaking in Bi2Te3 TI thin films: surface plasmon generation, charge transfer, and application of a periodic strain potential. These mechanisms are facilitated by semiconducting and insulating substrates that modify the electronic and mechanical conditions at the sample surface and alter the long-range interactions between Bi2Te3 and the substrate. We confirm the symmetry breaking in Bi2Te3 via the emergence of the Raman-forbidden $${{\boldsymbol{A}}}_{{\bf{1}}{\boldsymbol{u}}}^{{\bf{2}}}$$ A1u2 mode. Our results suggest that topological surface states can exist at the Bi2Te3/substrate interface, which is in a good agreement with previous theoretical results predicting the tunability of the vertical location of helical surface states in TI/substrate heterostructures.Maciej WiesnerRichard H. RobertsJung-Fu. LinDeji AkinwandeThorsten HesjedalLiam B. DuffyShumin WangYuxin SongJacek JenczykStefan JurgaBoguslaw MrozNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 9, Iss 1, Pp 1-8 (2019) |
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Medicine R Science Q Maciej Wiesner Richard H. Roberts Jung-Fu. Lin Deji Akinwande Thorsten Hesjedal Liam B. Duffy Shumin Wang Yuxin Song Jacek Jenczyk Stefan Jurga Boguslaw Mroz The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3 |
description |
Abstract A pressing challenge in engineering devices with topological insulators (TIs) is that electron transport is dominated by the bulk conductance, and so dissipationless surface states account for only a small fraction of the conductance. Enhancing the surface-to-volume ratio is a common method to enhance the relative contribution of such states. In thin films with reduced thickness, the confinement results in symmetry-breaking and is critical for the experimental observation of topologically protected surface states. We employ micro-Raman and tip-enhanced Raman spectroscopy to examine three different mechanisms of symmetry breaking in Bi2Te3 TI thin films: surface plasmon generation, charge transfer, and application of a periodic strain potential. These mechanisms are facilitated by semiconducting and insulating substrates that modify the electronic and mechanical conditions at the sample surface and alter the long-range interactions between Bi2Te3 and the substrate. We confirm the symmetry breaking in Bi2Te3 via the emergence of the Raman-forbidden $${{\boldsymbol{A}}}_{{\bf{1}}{\boldsymbol{u}}}^{{\bf{2}}}$$ A1u2 mode. Our results suggest that topological surface states can exist at the Bi2Te3/substrate interface, which is in a good agreement with previous theoretical results predicting the tunability of the vertical location of helical surface states in TI/substrate heterostructures. |
format |
article |
author |
Maciej Wiesner Richard H. Roberts Jung-Fu. Lin Deji Akinwande Thorsten Hesjedal Liam B. Duffy Shumin Wang Yuxin Song Jacek Jenczyk Stefan Jurga Boguslaw Mroz |
author_facet |
Maciej Wiesner Richard H. Roberts Jung-Fu. Lin Deji Akinwande Thorsten Hesjedal Liam B. Duffy Shumin Wang Yuxin Song Jacek Jenczyk Stefan Jurga Boguslaw Mroz |
author_sort |
Maciej Wiesner |
title |
The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3 |
title_short |
The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3 |
title_full |
The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3 |
title_fullStr |
The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3 |
title_full_unstemmed |
The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3 |
title_sort |
effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator bi2te3 |
publisher |
Nature Portfolio |
publishDate |
2019 |
url |
https://doaj.org/article/7cbb57d9f47243fd9fe0c042c93935b1 |
work_keys_str_mv |
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