Crossing the threshold of ultrafast laser writing in bulk silicon
Ultrafast laser processing is a versatile three-dimensional photonic structuring method but it has been limited to wide band gap materials like glasses. Here, Chanal et al. demonstrate direct refractive-index modification in the bulk of silicon by extreme localization of the energy deposition.
Enregistré dans:
Auteurs principaux: | Margaux Chanal, Vladimir Yu. Fedorov, Maxime Chambonneau, Raphaël Clady, Stelios Tzortzakis, David Grojo |
---|---|
Format: | article |
Langue: | EN |
Publié: |
Nature Portfolio
2017
|
Sujets: | |
Accès en ligne: | https://doaj.org/article/7ccda1285b2345f9a690836765d1eda0 |
Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
Documents similaires
-
Observation of extremely efficient terahertz generation from mid-infrared two-color laser filaments
par: Anastasios D. Koulouklidis, et autres
Publié: (2020) -
Ultrafast carbothermal reduction of silica to silicon using a CO2 laser beam
par: Seok-Ho Maeng, et autres
Publié: (2020) -
Low threshold Rhodamine-doped whispering gallery mode microlasers fabricated by direct laser writing
par: Nathália B. Tomazio, et autres
Publié: (2017) -
Crossing the Threshold
par: Abdul Kabir Hussain Solihu
Publié: (2006) -
Highly efficient broadband terahertz generation from ultrashort laser filamentation in liquids
par: Indranuj Dey, et autres
Publié: (2017)