Crossing the threshold of ultrafast laser writing in bulk silicon

Crossing the threshold of ultrafast laser writing in bulk silicon

Ultrafast laser processing is a versatile three-dimensional photonic structuring method but it has been limited to wide band gap materials like glasses. Here, Chanal et al. demonstrate direct refractive-index modification in the bulk of silicon by extreme localization of the energy deposition.

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Autores principales: Margaux Chanal, Vladimir Yu. Fedorov, Maxime Chambonneau, Raphaël Clady, Stelios Tzortzakis, David Grojo
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
Science
Q
Acceso en línea:https://doaj.org/article/7ccda1285b2345f9a690836765d1eda0
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