Crossing the threshold of ultrafast laser writing in bulk silicon
Ultrafast laser processing is a versatile three-dimensional photonic structuring method but it has been limited to wide band gap materials like glasses. Here, Chanal et al. demonstrate direct refractive-index modification in the bulk of silicon by extreme localization of the energy deposition.
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Autores principales: | , , , , , |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2017
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Materias: | |
Acceso en línea: | https://doaj.org/article/7ccda1285b2345f9a690836765d1eda0 |
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