Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory

In contrast to conventional 2-dimensional (2D) NAND flash memory, in 3D NAND flash memory, cell-to-cell interference stemming from parasitic capacitance between the word-lines (WLs) is difficult to control because the number of WLs, achieved for better packing density, have been dramatically increas...

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Autores principales:	Woo-Jin Jung, Jun-Young Park
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	dielectrics flash memory interference cell-programming vacuum dielectric V-NAND Mechanical engineering and machinery TJ1-1570
Acceso en línea:	https://doaj.org/article/7d81118ead744c04afee6966bb63ae60
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spelling	oai:doaj.org-article:7d81118ead744c04afee6966bb63ae602021-11-25T18:22:54ZDielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory10.3390/mi121112972072-666Xhttps://doaj.org/article/7d81118ead744c04afee6966bb63ae602021-10-01T00:00:00Zhttps://www.mdpi.com/2072-666X/12/11/1297https://doaj.org/toc/2072-666XIn contrast to conventional 2-dimensional (2D) NAND flash memory, in 3D NAND flash memory, cell-to-cell interference stemming from parasitic capacitance between the word-lines (WLs) is difficult to control because the number of WLs, achieved for better packing density, have been dramatically increased under limited height of NAND string. In this context, finding a novel approach based on dielectric engineering seems timely and applicable. This paper covers the voltage interference characteristics in 3D NAND with respect to dielectrics, then proposes an alternative cell structure to suppress such interference.Woo-Jin JungJun-Young ParkMDPI AGarticledielectricsflash memoryinterferencecell-programmingvacuum dielectricV-NANDMechanical engineering and machineryTJ1-1570ENMicromachines, Vol 12, Iss 1297, p 1297 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	dielectrics flash memory interference cell-programming vacuum dielectric V-NAND Mechanical engineering and machinery TJ1-1570
spellingShingle	dielectrics flash memory interference cell-programming vacuum dielectric V-NAND Mechanical engineering and machinery TJ1-1570 Woo-Jin Jung Jun-Young Park Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory
description	In contrast to conventional 2-dimensional (2D) NAND flash memory, in 3D NAND flash memory, cell-to-cell interference stemming from parasitic capacitance between the word-lines (WLs) is difficult to control because the number of WLs, achieved for better packing density, have been dramatically increased under limited height of NAND string. In this context, finding a novel approach based on dielectric engineering seems timely and applicable. This paper covers the voltage interference characteristics in 3D NAND with respect to dielectrics, then proposes an alternative cell structure to suppress such interference.
format	article
author	Woo-Jin Jung Jun-Young Park
author_facet	Woo-Jin Jung Jun-Young Park
author_sort	Woo-Jin Jung
title	Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory
title_short	Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory
title_full	Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory
title_fullStr	Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory
title_full_unstemmed	Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory
title_sort	dielectric engineering to suppress cell-to-cell programming voltage interference in 3d nand flash memory
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/7d81118ead744c04afee6966bb63ae60
work_keys_str_mv	AT woojinjung dielectricengineeringtosuppresscelltocellprogrammingvoltageinterferencein3dnandflashmemory AT junyoungpark dielectricengineeringtosuppresscelltocellprogrammingvoltageinterferencein3dnandflashmemory
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Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory

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