Spatially controlled epitaxial growth of 2D heterostructures via defect engineering using a focused He ion beam

Abstract The combination of two-dimensional (2D) materials into heterostructures enables the formation of atomically thin devices with designed properties. To achieve a high-density, bottom-up integration, the growth of these 2D heterostructures via van der Waals epitaxy (vdWE) is an attractive alte...

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Autores principales:	Martin Heilmann, Victor Deinhart, Abbes Tahraoui, Katja Höflich, J. Marcelo J. Lopes
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/7d8dd893fc92480bb120e784c652f030
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spelling	oai:doaj.org-article:7d8dd893fc92480bb120e784c652f0302021-12-02T16:35:47ZSpatially controlled epitaxial growth of 2D heterostructures via defect engineering using a focused He ion beam10.1038/s41699-021-00250-z2397-7132https://doaj.org/article/7d8dd893fc92480bb120e784c652f0302021-08-01T00:00:00Zhttps://doi.org/10.1038/s41699-021-00250-zhttps://doaj.org/toc/2397-7132Abstract The combination of two-dimensional (2D) materials into heterostructures enables the formation of atomically thin devices with designed properties. To achieve a high-density, bottom-up integration, the growth of these 2D heterostructures via van der Waals epitaxy (vdWE) is an attractive alternative to the currently mostly employed mechanical transfer, which is problematic in terms of scaling and reproducibility. Controlling the location of the nuclei formation remains a key challenge in vdWE. Here, a focused He ion beam is used to deterministically place defects in graphene substrates, which serve as preferential nucleation sites for the growth of insulating, 2D hexagonal boron nitride (h-BN). Therewith a mask-free, selective-area vdWE (SAvdWE) is demonstrated, in which nucleation yield and crystal quality of h-BN are controlled by the ion beam parameters used for defect formation. Moreover, h-BN grown via SAvdWE is shown to exhibit electron tunneling characteristics comparable to those of mechanically transferred layers, thereby lying the foundation for a reliable, high-density array fabrication of 2D heterostructures for device integration via defect engineering in 2D substrates.Martin HeilmannVictor DeinhartAbbes TahraouiKatja HöflichJ. Marcelo J. LopesNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 Martin Heilmann Victor Deinhart Abbes Tahraoui Katja Höflich J. Marcelo J. Lopes Spatially controlled epitaxial growth of 2D heterostructures via defect engineering using a focused He ion beam
description	Abstract The combination of two-dimensional (2D) materials into heterostructures enables the formation of atomically thin devices with designed properties. To achieve a high-density, bottom-up integration, the growth of these 2D heterostructures via van der Waals epitaxy (vdWE) is an attractive alternative to the currently mostly employed mechanical transfer, which is problematic in terms of scaling and reproducibility. Controlling the location of the nuclei formation remains a key challenge in vdWE. Here, a focused He ion beam is used to deterministically place defects in graphene substrates, which serve as preferential nucleation sites for the growth of insulating, 2D hexagonal boron nitride (h-BN). Therewith a mask-free, selective-area vdWE (SAvdWE) is demonstrated, in which nucleation yield and crystal quality of h-BN are controlled by the ion beam parameters used for defect formation. Moreover, h-BN grown via SAvdWE is shown to exhibit electron tunneling characteristics comparable to those of mechanically transferred layers, thereby lying the foundation for a reliable, high-density array fabrication of 2D heterostructures for device integration via defect engineering in 2D substrates.
format	article
author	Martin Heilmann Victor Deinhart Abbes Tahraoui Katja Höflich J. Marcelo J. Lopes
author_facet	Martin Heilmann Victor Deinhart Abbes Tahraoui Katja Höflich J. Marcelo J. Lopes
author_sort	Martin Heilmann
title	Spatially controlled epitaxial growth of 2D heterostructures via defect engineering using a focused He ion beam
title_short	Spatially controlled epitaxial growth of 2D heterostructures via defect engineering using a focused He ion beam
title_full	Spatially controlled epitaxial growth of 2D heterostructures via defect engineering using a focused He ion beam
title_fullStr	Spatially controlled epitaxial growth of 2D heterostructures via defect engineering using a focused He ion beam
title_full_unstemmed	Spatially controlled epitaxial growth of 2D heterostructures via defect engineering using a focused He ion beam
title_sort	spatially controlled epitaxial growth of 2d heterostructures via defect engineering using a focused he ion beam
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/7d8dd893fc92480bb120e784c652f030
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Spatially controlled epitaxial growth of 2D heterostructures via defect engineering using a focused He ion beam

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