Spatially controlled epitaxial growth of 2D heterostructures via defect engineering using a focused He ion beam
Abstract The combination of two-dimensional (2D) materials into heterostructures enables the formation of atomically thin devices with designed properties. To achieve a high-density, bottom-up integration, the growth of these 2D heterostructures via van der Waals epitaxy (vdWE) is an attractive alte...
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| Main Authors: | , , , , |
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| Format: | article |
| Language: | EN |
| Published: |
Nature Portfolio
2021
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| Subjects: | |
| Online Access: | https://doaj.org/article/7d8dd893fc92480bb120e784c652f030 |
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