Strain influence on the diffusion thermopower in Bi wires

We present the results of studies of the thermopower in glass-coated Bi wires under the action of uniaxial deformation. At the liquid helium temperature, thin Bi wires exhibit large positive thermopower values, which are dominated by the diffusive transport mechanism of holes. The observed increase...

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Autor principal:	Condrea, Elena
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2018
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/7e611f9b3e0d43fcad88ea639a45b7cd
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spelling	oai:doaj.org-article:7e611f9b3e0d43fcad88ea639a45b7cd2021-11-21T11:56:08ZStrain influence on the diffusion thermopower in Bi wires537.312+537.322537-63651810-648Xhttps://doaj.org/article/7e611f9b3e0d43fcad88ea639a45b7cd2018-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2018/article/71374https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365We present the results of studies of the thermopower in glass-coated Bi wires under the action of uniaxial deformation. At the liquid helium temperature, thin Bi wires exhibit large positive thermopower values, which are dominated by the diffusive transport mechanism of holes. The observed increase in the negative contribution to total thermopower under uniaxial strain testifies that the hole-dominated transport can be transformed into the electron-dominated transport. The observed trend to negative thermopower values under strain can be attributed partially to a slight increase in the electron mobility and partially to the occurrence of the phonon drag effect of electrons. The phonon drag effect prevails in the thermopower, if the phonons acquire a sufficient momentum to scatter the carriers across the Fermi surface changed after an Electronic Topological Transition.Condrea, ElenaD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 17, Iss 3-4, Pp 154-160 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Condrea, Elena Strain influence on the diffusion thermopower in Bi wires
description	We present the results of studies of the thermopower in glass-coated Bi wires under the action of uniaxial deformation. At the liquid helium temperature, thin Bi wires exhibit large positive thermopower values, which are dominated by the diffusive transport mechanism of holes. The observed increase in the negative contribution to total thermopower under uniaxial strain testifies that the hole-dominated transport can be transformed into the electron-dominated transport. The observed trend to negative thermopower values under strain can be attributed partially to a slight increase in the electron mobility and partially to the occurrence of the phonon drag effect of electrons. The phonon drag effect prevails in the thermopower, if the phonons acquire a sufficient momentum to scatter the carriers across the Fermi surface changed after an Electronic Topological Transition.
format	article
author	Condrea, Elena
author_facet	Condrea, Elena
author_sort	Condrea, Elena
title	Strain influence on the diffusion thermopower in Bi wires
title_short	Strain influence on the diffusion thermopower in Bi wires
title_full	Strain influence on the diffusion thermopower in Bi wires
title_fullStr	Strain influence on the diffusion thermopower in Bi wires
title_full_unstemmed	Strain influence on the diffusion thermopower in Bi wires
title_sort	strain influence on the diffusion thermopower in bi wires
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2018
url	https://doaj.org/article/7e611f9b3e0d43fcad88ea639a45b7cd
work_keys_str_mv	AT condreaelena straininfluenceonthediffusionthermopowerinbiwires
_version_	1718419373933199360

Strain influence on the diffusion thermopower in Bi wires

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