Spectral dependence of THz emission from InN and InGaN layers

Abstract Spectral dependence of terahertz emission is a sensitive tool to analyze the structure of conduction band of semiconductors. In this work, we investigate the excitation spectra of THz pulses emitted from MOCVD-grown InN and InGaN epitaxial layers with indium content of 16%, 68%, and 80%. In...

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Autores principales:	Ričardas Norkus, Ramūnas Aleksiejūnas, Arūnas Kadys, Marek Kolenda, Gintautas Tamulaitis, Arūnas Krotkus
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/7f6166020a2c4030a818c69a38be130b
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spelling	oai:doaj.org-article:7f6166020a2c4030a818c69a38be130b2021-12-02T16:08:43ZSpectral dependence of THz emission from InN and InGaN layers10.1038/s41598-019-43642-42045-2322https://doaj.org/article/7f6166020a2c4030a818c69a38be130b2019-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-019-43642-4https://doaj.org/toc/2045-2322Abstract Spectral dependence of terahertz emission is a sensitive tool to analyze the structure of conduction band of semiconductors. In this work, we investigate the excitation spectra of THz pulses emitted from MOCVD-grown InN and InGaN epitaxial layers with indium content of 16%, 68%, and 80%. In InN and indium-rich InGaN layers we observe a gradual saturation of THz emission efficiency with increasing photon energy. This is in stark contrast to other III-V semiconductors where an abrupt drop of THz efficiency occurs at certain photon energy due to inter-valley electron scattering. From these results, we set a lower limit of the intervalley energy separation in the conduction band of InN as 2.4 eV. In terms of THz emission efficiency, the largest optical-to-THz energy conversion rate was obtained in 75 nm thick In0.16Ga0.84N layer, while lower THz emission efficiency was observed from InN and indium-rich InGaN layers due to the screening of built-in field by a high-density electron gas in these materials.Ričardas NorkusRamūnas AleksiejūnasArūnas KadysMarek KolendaGintautas TamulaitisArūnas KrotkusNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 9, Iss 1, Pp 1-6 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Ričardas Norkus Ramūnas Aleksiejūnas Arūnas Kadys Marek Kolenda Gintautas Tamulaitis Arūnas Krotkus Spectral dependence of THz emission from InN and InGaN layers
description	Abstract Spectral dependence of terahertz emission is a sensitive tool to analyze the structure of conduction band of semiconductors. In this work, we investigate the excitation spectra of THz pulses emitted from MOCVD-grown InN and InGaN epitaxial layers with indium content of 16%, 68%, and 80%. In InN and indium-rich InGaN layers we observe a gradual saturation of THz emission efficiency with increasing photon energy. This is in stark contrast to other III-V semiconductors where an abrupt drop of THz efficiency occurs at certain photon energy due to inter-valley electron scattering. From these results, we set a lower limit of the intervalley energy separation in the conduction band of InN as 2.4 eV. In terms of THz emission efficiency, the largest optical-to-THz energy conversion rate was obtained in 75 nm thick In0.16Ga0.84N layer, while lower THz emission efficiency was observed from InN and indium-rich InGaN layers due to the screening of built-in field by a high-density electron gas in these materials.
format	article
author	Ričardas Norkus Ramūnas Aleksiejūnas Arūnas Kadys Marek Kolenda Gintautas Tamulaitis Arūnas Krotkus
author_facet	Ričardas Norkus Ramūnas Aleksiejūnas Arūnas Kadys Marek Kolenda Gintautas Tamulaitis Arūnas Krotkus
author_sort	Ričardas Norkus
title	Spectral dependence of THz emission from InN and InGaN layers
title_short	Spectral dependence of THz emission from InN and InGaN layers
title_full	Spectral dependence of THz emission from InN and InGaN layers
title_fullStr	Spectral dependence of THz emission from InN and InGaN layers
title_full_unstemmed	Spectral dependence of THz emission from InN and InGaN layers
title_sort	spectral dependence of thz emission from inn and ingan layers
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/7f6166020a2c4030a818c69a38be130b
work_keys_str_mv	AT ricardasnorkus spectraldependenceofthzemissionfrominnandinganlayers AT ramunasaleksiejunas spectraldependenceofthzemissionfrominnandinganlayers AT arunaskadys spectraldependenceofthzemissionfrominnandinganlayers AT marekkolenda spectraldependenceofthzemissionfrominnandinganlayers AT gintautastamulaitis spectraldependenceofthzemissionfrominnandinganlayers AT arunaskrotkus spectraldependenceofthzemissionfrominnandinganlayers
_version_	1718384480198066176

Spectral dependence of THz emission from InN and InGaN layers

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