Spectral dependence of THz emission from InN and InGaN layers
Abstract Spectral dependence of terahertz emission is a sensitive tool to analyze the structure of conduction band of semiconductors. In this work, we investigate the excitation spectra of THz pulses emitted from MOCVD-grown InN and InGaN epitaxial layers with indium content of 16%, 68%, and 80%. In...
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| Main Authors: | , , , , , |
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| Format: | article |
| Language: | EN |
| Published: |
Nature Portfolio
2019
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| Subjects: | |
| Online Access: | https://doaj.org/article/7f6166020a2c4030a818c69a38be130b |
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