Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge
Typical CMOS materials in the telecommunications band suffer from two-photon absorption or possess weak Kerr nonlinearities. Here, Ooiet al. demonstrate 42.5 dB optical parametric amplification in ultra-silicon-rich nitride waveguides, designed to have strong nonlinearities with negligible losses.
Guardado en:
| Autores principales: | , , , , , , , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2017
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/7f6ed2486dad49f78b6343084767f909 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| Sumario: | Typical CMOS materials in the telecommunications band suffer from two-photon absorption or possess weak Kerr nonlinearities. Here, Ooiet al. demonstrate 42.5 dB optical parametric amplification in ultra-silicon-rich nitride waveguides, designed to have strong nonlinearities with negligible losses. |
|---|