Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge

Typical CMOS materials in the telecommunications band suffer from two-photon absorption or possess weak Kerr nonlinearities. Here, Ooiet al. demonstrate 42.5 dB optical parametric amplification in ultra-silicon-rich nitride waveguides, designed to have strong nonlinearities with negligible losses.

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Autores principales:	K. J. A. Ooi, D. K. T. Ng, T. Wang, A. K. L. Chee, S. K. Ng, Q. Wang, L. K. Ang, A. M. Agarwal, L. C. Kimerling, D. T. H. Tan
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/7f6ed2486dad49f78b6343084767f909
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spelling	oai:doaj.org-article:7f6ed2486dad49f78b6343084767f9092021-12-02T14:40:46ZPushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge10.1038/ncomms138782041-1723https://doaj.org/article/7f6ed2486dad49f78b6343084767f9092017-01-01T00:00:00Zhttps://doi.org/10.1038/ncomms13878https://doaj.org/toc/2041-1723Typical CMOS materials in the telecommunications band suffer from two-photon absorption or possess weak Kerr nonlinearities. Here, Ooiet al. demonstrate 42.5 dB optical parametric amplification in ultra-silicon-rich nitride waveguides, designed to have strong nonlinearities with negligible losses.K. J. A. OoiD. K. T. NgT. WangA. K. L. CheeS. K. NgQ. WangL. K. AngA. M. AgarwalL. C. KimerlingD. T. H. TanNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-10 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q K. J. A. Ooi D. K. T. Ng T. Wang A. K. L. Chee S. K. Ng Q. Wang L. K. Ang A. M. Agarwal L. C. Kimerling D. T. H. Tan Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge
description	Typical CMOS materials in the telecommunications band suffer from two-photon absorption or possess weak Kerr nonlinearities. Here, Ooiet al. demonstrate 42.5 dB optical parametric amplification in ultra-silicon-rich nitride waveguides, designed to have strong nonlinearities with negligible losses.
format	article
author	K. J. A. Ooi D. K. T. Ng T. Wang A. K. L. Chee S. K. Ng Q. Wang L. K. Ang A. M. Agarwal L. C. Kimerling D. T. H. Tan
author_facet	K. J. A. Ooi D. K. T. Ng T. Wang A. K. L. Chee S. K. Ng Q. Wang L. K. Ang A. M. Agarwal L. C. Kimerling D. T. H. Tan
author_sort	K. J. A. Ooi
title	Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge
title_short	Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge
title_full	Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge
title_fullStr	Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge
title_full_unstemmed	Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge
title_sort	pushing the limits of cmos optical parametric amplifiers with usrn:si7n3 above the two-photon absorption edge
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/7f6ed2486dad49f78b6343084767f909
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Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge

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